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Name: BLF574XRS112
Brand: NXP USA Inc.
SKU: BLF574XRS112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. BLF574XRS112

Part No.:: BLF574XRS112

Manufacturer:: NXP USA Inc.

Package:: -

Datasheet:

Description:: POWER LDMOS TRANSISTOR, SOT1214

In Stock:: 3699

Quantity:: Add To Cart

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BLF574XRS112 Specifications

Packaging:
Bulk
Series:
*
ProductStatus:
Active
TransistorType:
-
Current-Collector(Ic)(Max):
-
Voltage-CollectorEmitterBreakdown(Max):
-
VceSaturation(Max)@IbIc:
-
Current-CollectorCutoff(Max):
-
DCCurrentGain(hFE)(Min)@IcVce:
-
Power-Max:
-
Frequency-Transition:
-
OperatingTemperature:
-
MountingType:
-

BLF574XRS112 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLF574XRS112 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLF574XRS112 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLF574XRS112 information

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BLF574XRS112 Typical application Circuitry

BLF574XRS112

The BLF574XRS112 is a high-power RF LDMOS transistor, designed for applications requiring efficient RF power amplification. It's typically used in scenarios demanding high power and efficiency, such as broadcast transmitters, industrial RF heating, and RF plasma generation. The transistor is capable of handling high power levels and is optimized for a wide range of frequencies, making it a versatile component in RF applications. Let's explore its application scenarios, key specifications, and a detailed example of its integration into a circuit:

BLF574XRS112: Functional Overview and Application Context

Primary Applications

- Broadcast Transmitters: Commonly used in radio and TV broadcasting for high-power signal amplification.

- Industrial RF Heating: Suitable for RF energy applications in industrial heating processes.

- RF Plasma Generation: Employed in applications that generate plasma using RF power, such as in scientific research.

Key Specifications

- LDMOS Technology: Utilizes Laterally Diffused Metal Oxide Semiconductor technology, known for high power and efficiency in RF applications.

- Wide Frequency Range: Capable of operating effectively across various RF frequency bands.

- High Power Handling: Designed to deliver robust RF power, crucial for high-demand RF applications.

Circuit Design: BLF574XRS112 in a Broadcast Transmitter

1. RF Signal Input

- Gate (Pin 1): Connect the modulated RF input signal to the gate. This pin controls the transistor and initiates the amplification process.

2. Power Supply Connection

- Drain (Pin 2): Attach the drain to a high-power RF supply. This is the primary source of power for the amplification stage.

3. Output to Transmission Line

- Source (Pin 3): Connect the source to the transmission line or antenna system. This pin outputs the amplified RF signal.

4. Biasing for Gate

- Gate Bias (Additional Pin): Implement a biasing network for the gate to manage the transistor's operation effectively.

Design Considerations

- Stable and Robust Power Supply: Essential for handling the high-power requirements of the transistor.

- Effective Heat Management: Implement cooling solutions, as high-power RF amplification generates significant heat.

- Impedance Matching: Achieve optimal impedance matching to maximize power transfer and efficiency.

- Signal Integrity Preservation: Maintain the quality of the RF signal throughout the amplification process.

- PCB Layout and EMI Management: Maintain signal integrity and limit electromagnetic interference when designing the PCB.

- Accurate Gate Voltage Control: Maintain stable and linear transistor functioning by precisely controlling the gate voltage.

Regulatory Compliance: Comply with rules and regulations set forth by the industry; this is particularly crucial for broadcasting applications.

- Environmental Considerations: Take performance-affecting factors such as operating temperature and other environmental circumstances into account.

Incorporating the BLF574XRS112 into a circuit requires careful consideration of these factors for optimal functionality and performance. For comprehensive specifications, including pin layout and electrical parameters, always refer to the BLF574XRS112's datasheet and technical documentation.

BLF574XRS112 FAQ

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3. Are the BLF574XRS112 price and inventory displayed accurate?

The price and inventory of BLF574XRS112 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of BLF574XRS112?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLF574XRS112 we delivered, we will accept the replacement or return of the BLF574XRS112 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLF574XRS112.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations