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Toshiba Semiconductor and Storage 2SA1943N(S1,E,S)

Part No.:: 2SA1943N(S1,E,S)

Manufacturer:: Toshiba Semiconductor and Storage

Package:: TO-3P-3, SC-65-3

Datasheet:: 2SA1943N(S1,E,S).pdf

Description:: TRANS PNP 230V 15A TO3P

In Stock:: 3520

Quantity:: Add To Cart

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2SA1943N(S1,E,S) Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
TransistorType:
PNP
Current-Collector(Ic)(Max):
15 A
Voltage-CollectorEmitterBreakdown(Max):
230 V
VceSaturation(Max)@IbIc:
3V @ 800mA, 8A
Current-CollectorCutoff(Max):
5µA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce:
80 @ 1A, 5V
Power-Max:
150 W
Frequency-Transition:
30MHz
OperatingTemperature:
150°C (TJ)
MountingType:
Through Hole

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2SA1943N(S1,E,S) information

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2SA1943N(S1,E,S) Typical application Circuitry

The 2SA1943N(S1,E,S) is a critical component within the extensive lineup of power transistors, specifically designed for high-fidelity audio amplification and other high-power applications. This PNP silicon transistor is renowned for its high power and voltage capabilities, making it an ideal choice for high-performance audio applications, power amplification circuits, and complementing high-power NPN transistors in push-pull configurations. The notation "(S1,E,S)" signifies the pin configuration of the transistor, denoting the Collector (S1), Emitter (E), and Base (S) connections, respectively. This detailed guide explores the 2SA1943N(S1,E,S), focusing on its series characteristics, precise circuit connection methods, and the significance of each pin for optimal performance.

1. Series Characteristics: The 2SA1943N(S1,E,S) is part of a transistor series known for exceptional power handling and efficiency, making them a staple in audio amplification circuits. With a high collector-emitter voltage and a collector power dissipation capability, this transistor is engineered to meet the rigorous demands of high-output audio devices and other power-intensive applications.

2. Detailed Circuit Connection Method: Integrating the 2SA1943N(S1,E,S) into a circuit requires meticulous attention to its pin configuration for correct functionality. The device's three pins - Collector (S1), Emitter (E), and Base (S) - must be accurately connected to the corresponding parts of the circuit. The Collector (S1) is typically connected to the power supply through a load resistor, the Emitter (E) is connected to the ground or the negative side of the power supply, and the Base (S) serves as the control input, where the input signal is applied. This configuration enables the transistor to amplify the input signal, driving larger currents through the load connected to the Collector.

3. Collector (S1) Connection: The Collector (S1) pin is the primary current carrying terminal, handling the output current from the transistor. For optimal performance, it's crucial to ensure that the Collector is connected with appropriate considerations for power dissipation, using heat sinks if necessary, to manage the thermal load generated by high-current applications.

4. Emitter (E) Connection: The Emitter (E) pin serves as the reference point for the transistor's operation, with its connection to the circuit's ground or negative voltage rail being vital for stable operation. Proper connection of the Emitter ensures that the transistor can efficiently complete the circuit for current flow when activated.

5. Base (S) Connection: The Base (S) pin is the control gate for the transistor, where the input signal is applied to modulate the current flowing through the Collector-Emitter path. The signal applied to the Base must be correctly biased to ensure the transistor operates in the desired region of its characteristic curves, typically requiring a resistor to limit the base current and protect the device from excessive input.

6. Ensuring Optimal Performance: To harness the full potential of the 2SA1943N(S1,E,S), it's essential to pay close attention to the biasing of the Base, the thermal management of the Collector, and the secure grounding of the Emitter. Additionally, pairing the 2SA1943N(S1,E,S) with a complementary NPN transistor in push-pull configurations can significantly enhance the efficiency and output power of audio amplifiers, making it a preferred choice among audiophiles and professional audio equipment manufacturers.

In conclusion, the 2SA1943N(S1,E,S) transistor is a cornerstone in the design of high-performance audio amplifiers and power circuits, offering robustness, high power handling, and reliability. By adhering to precise connection methods and considering each pin's role within the circuit, designers and hobbyists alike can leverage the capabilities of the 2SA1943N(S1,E,S) to achieve superior sound quality and efficient power amplification in their projects. This detailed exploration underscores the importance of understanding the technical characteristics and connection strategies for maximizing the utility and performance of the 2SA1943N(S1,E,S) in various applications.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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