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Toshiba Semiconductor and Storage 2SA1943-O(S1,F

Part No.:: 2SA1943-O(S1,F

Manufacturer:: Toshiba Semiconductor and Storage

Package:: TO-3PL

Datasheet:: 2SA1943-O(S1,F.pdf

Description:: PB-F POWER TRANSISTOR TO-3PL PC=

In Stock:: 2178

Quantity:: Add To Cart

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2SA1943-O(S1,F Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
TransistorType:
PNP
Current-Collector(Ic)(Max):
15 A
Voltage-CollectorEmitterBreakdown(Max):
230 V
VceSaturation(Max)@IbIc:
3V @ 800mA, 8A
Current-CollectorCutoff(Max):
5µA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce:
80 @ 1A, 5V
Power-Max:
150 W
Frequency-Transition:
30MHz
OperatingTemperature:
150°C (TJ)
MountingType:
Through Hole

2SA1943-O(S1,F this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2SA1943-O(S1,F price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2SA1943-O(S1,F to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2SA1943-O(S1,F information

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2SA1943-O(S1,F Typical application Circuitry

The 2SA1943-O(S1,F) is a pivotal component within the series of high-power, PNP bipolar transistors designed for audio frequency power amplification. This transistor is celebrated for its high fidelity and reliability in audio applications, making it a staple in the design of high-power amplifiers. The suffix "O(S1,F)" in its designation denotes specific classification criteria, including package type and performance characteristics, ensuring that it meets precise requirements for audio amplification circuits.

1. Introduction to the 2SA1943 Series: This series is renowned for delivering exceptional power handling and efficiency, crucial for reducing distortion and improving sound quality in audio amplification systems. The 2SA1943-O(S1,F) stands out for its robust construction and ability to operate at high voltages, thereby enabling it to drive large loads with ease.

2. Circuit Connection Methodology: The 2SA1943-O(S1,F) transistor is encapsulated in a TO-3P package, which provides excellent heat dissipation characteristics. It has three pins: the emitter (E), the collector (C), and the base (B). In a typical application, the collector is connected to the power supply through a load, the base serves as the control input receiving the audio signal, and the emitter is grounded or connected to a negative power supply, forming the foundation of a classic PNP transistor amplification circuit.

3. Detailed Pin Configuration:

- Emitter (E): This pin is crucial for the outflow of charge carriers (holes in the case of PNP transistors). In the circuit, it is often connected to the negative side of the power supply.

- Base (B): The base pin serves as the control gate for the transistor. A small current to the base allows a much larger current to flow from the collector to the emitter. In an audio amplifier, this pin receives the input signal.

- Collector (C): The collector pin is connected to the load and the positive voltage supply. It collects charge carriers from the emitter via the base control.

4. Electrical Characteristics: The 2SA1943-O(S1,F) boasts a collector-emitter voltage (Vce) of up to -230V, and a collector current (Ic) capability of up to -15A, making it capable of handling significant power levels required for audio amplification. Its power dissipation (Pc) can reach up to 150W, providing a testament to its efficiency in converting electrical energy into audio signals without excessive heat generation.

5. Amplifier Design Considerations: When integrating the 2SA1943-O(S1,F) into an amplifier design, it is imperative to pair it with a complementary NPN transistor (such as the 2SC5200) to form a push-pull amplifier stage. This configuration enhances the efficiency of the amplifier by allowing both halves of the audio waveform to be amplified more effectively. Additionally, incorporating feedback networks and biasing circuits ensures stability and minimizes distortion, thereby enhancing audio fidelity.

6. Thermal Management: Given its high power dissipation, the 2SA1943-O(S1,F) requires adequate thermal management. Mounting the transistor on a heat sink with thermal compound ensures efficient heat dissipation. Furthermore, thermal runaway prevention is crucial, necessitating bias stabilization circuits to adjust the base current in response to temperature changes.

In essence, the 2SA1943-O(S1,F) embodies a cornerstone of high-power audio amplification, with its application extending beyond just amplifiers to include any circuitry requiring robust, high-fidelity PNP transistor functionality. Its deployment in audio systems necessitates careful consideration of circuit design, including pairing with complementary transistors, thermal management, and stability enhancement techniques. By adhering to these principles, designers can harness the full potential of the 2SA1943-O(S1,F) to create audio amplifiers that deliver unparalleled sound quality and reliability, embodying the pinnacle of audio performance.

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6. What is the process for return or replacement of 2SA1943-O(S1,F?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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