2N7000 Transistor Explained: Essential 2N7000 Circuit Tips

2024/10/28 17:50:36

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The 2N7000 MOSFET a general-purpose low-power transistor broadly utilized in switching and amplification applications, particularly in space and vitality productivity related ventures. This article will investigate the center characteristics, determinations, and normal applications of the 2N7000 MOSFET, whereas moreover tending to its datasheet data, pinout, and basic circuit insights. By understanding these essentials, you'll get the foremost out of this MOSFET in your electronic plan.


#1720 2N7000 FET


Table of Contents

Overview of the 2N7000 Transistor

The 2N7000 is an N-channel MOSFET, meaning it requires a positive voltage to turn on and is appropriate for exchanging little loads. It incorporates a low gate limit voltage, making it simple to interface with various low-power digital devices, such as microcontrollers. One of its standout highlights is its capacity to function at a moo gate-source voltage whereas dealing with a better drain-source voltage.

2N7000 Pinout

2N7000 Pinout

The 2N7000 Pinout comprises of three fundamental pins-Gate (G), Deplete (D), and Source (S)-each serving a particular work in circuit operation.

Pin
Label
Function
1
D
Drain: The main current-carrying terminal
2
G
Gate: The terminal that controls current flow
3
S
Source: The terminal where current enters the device

2N7000 Specs and Key Features

  • Drain-Source Voltage (Vds): 60V
  • Continuous Drain Current (Id): 200 mA
  • Gate Threshold Voltage (Vgs(th)): 0.8V to 3V
  • Drain-Source On-Resistance (Rds(on)): Approximately 5 ohms at 4.5V Vgs
  • Power Dissipation (Pd): 0.4W

Key Applications of the 2N7000 MOSFET

  • Relay Driver: Controls small relays in low power Settings.
  • LED driver: Provides controlled LED brightness.
  • Digital logic: Enables precise signal control.
  • Small-Signal Amplifier: Amplifies weak signals in audio/RF circuits with low noise.


2N7000 important circuit diagram

MOSFET controlled LED switch circuit

MOSFET controlled LED switch circuit

This is a basic MOSFET switching circuit used to control an LED.

Component
V1 (5V)
D1 (LED)
R1 (6 Ω)
M1 (2N7000 MOSFET)
R2 (90 kΩ)
Description
Power source.
Lights up when current flows.
Limits LED current.
Switches LED on/off.
Pulls MOSFET gate to ground.

2N7000 MOSFET Signal Buffer Circuit

2N7000 MOSFET Signal Buffer Circuit

This is a schematic diagram of an audio amplifier circuit or signal buffer using two 2N7000 MOSFETs.

Component
Q1 & Q2
C2 & C3
R1 & D1
R2
C1
Description
Amplify or buffer the input signal.
AC coupling capacitors.
Protect RX_5V input.
Bias resistor.
Input filter.

2N7000 RF Amplifier Circuit

2N7000 RF Amplifier Circuit

This is often an RF intensifier circuit that employments two 2N7000 MOSFETs (Q1 and Q2) to increase the RF input (RF-IN) to the output (RF-OUT).

Component
R1, R2
R3, R4
C1-C4
Q1, Q2
12V DC
Description
Biasing resistors for Q1.
Biasing resistors for Q2.
AC coupling and bypass capacitors.
2N7000 MOSFET amplifiers.
Power supply.

MOSFET LED Blinker Circuit

MOSFET LED Blinker Circuit

This is a schematic diagram of a simple LED driver circuit using a 2N7000 N-channel MOSFET and an LTL-307EE LED.

Component
MCU
V1
M1 (2N7000 MOSFET)
D1 (LTL-307EE LED)
R2 (330 Ω Resistor)
+9V Power Supply
Description
Generates a 1 Hz square wave signal.
Square wave (1 Hz) controls the MOSFET.
Acts as a switch for the LED.
Lights up when current flows through it.
Limits current to protect the LED.
Powers the LED circuit.


2N7000 Replacement

Replacement Transistor
Max Drain-Source Voltage (Vds)
Max Drain Current (Id)
Max Gate-Source Voltage (Vgs)
Rds(on)
Package Type
2N7002
60V
300mA
±20V
1.8Ω
SOT-23
IRLML6344
30V
5.2A
±12V
0.045Ω
SOT-23
BSS138
50V
200mA
±20V
3.5Ω
SOT-23
BS170
60V
500mA
±20V
TO-92
BSS123
100V
170mA
±20V
10Ω
SOT-23


2N7000 Datasheet

Parameter
Value
Description
Maximum Drain-Source Voltage (VDS)
60V
Maximum voltage between drain and source
Maximum Gate-Source Voltage (VGS)
±20V
Maximum voltage between gate and source
Maximum Drain Current (ID)
200mA
Continuous drain current
Maximum Power Dissipation (PD)
400mW
Maximum power dissipation at 25°C
Drain-Source On-Resistance (RDS(on))
5Ω (max)
Resistance when fully on, VGS = 10V
Threshold Voltage (VGS(th))
2-3V
Gate-source voltage required to start conduction
Operating Temperature Range
-55°C to +150°C
Temperature range for reliable operation

The 2N7000 data sheet is fundamental to get it the electrical characteristics of MOSFETs, secure working ranges, and details for other circuit plans.


Conclusion

The 2N7000 MOSFET may be a compact, vitality productive transistor that's well suited for low control exchanging applications, from Driven driving to hand-off control. It is known for its low cost, flexibility, and unwavering quality, making it a cost-effective choice for novices or engineers. With a deep understanding of its datasheet, architects can too use the complete capabilities of the 2N7000 on a assortment of ventures


Commonly Asked Questions

What is the 2N7000 MOSFET utilized for?

The 2N7000 could be a low-power N-channel MOSFET commonly utilized for exchanging applications, Driven drivers, hand-off control, and small-signal enhancement in advanced and sound circuits.

How do I interface a 2N7000 to an Arduino?

Interface the Arduino's computerized yield to the MOSFET's door through a resistor, the deplete to the load's negative terminal, and the source to ground. The load's other conclusion interfaces to the positive supply.

What is the most extreme voltage for the 2N7000?

The most extreme drain-source voltage (Vds) for the 2N7000 MOSFET is 60V, appropriate for low-voltage exchanging applications.

Can the 2N7000 handle high-speed exchanging?

Yes, with moo door capacitance, the 2N7000 is reasonable for high-speed exchanging, but its 200 mA current constrain limits it to low-power applications.

What is the limit voltage of the 2N7000?

The door limit voltage (Vgs(th)) ranges from 0.8V to 3V, permitting it to work well with 3.3V or 5V rationale gadgets.
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