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Name: TFF11096HN/N1,111
Brand: NXP USA Inc.
SKU: TFF11096HN/N1,111
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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NXP USA Inc. TFF11096HN/N1,111

Part No.:: TFF11096HN/N1,111

Manufacturer:: NXP USA Inc.

Package:: 24-VFQFN Exposed Pad

Datasheet:: TFF11096HN/N1,111.pdf

Description:: IC FREQUENCY GEN VSAT 24HVQFN

In Stock:: 2239

Quantity:: Add To Cart

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TFF11096HN/N1,111 Specifications

Packaging:
Tray
Series:
-
Product Status:
Obsolete
PLL:
Yes
Main Purpose:
Ku band VSAT applications
Input:
Clock
Output:
Clock
Number of Circuits:
1
Ratio-Input:Output:
1:4
Differential-Input:Output:
Yes/No
Frequency-Max:
9.8GHZ
Voltage-Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C
Mounting Type:
Surface Mount

TFF11096HN/N1,111 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including TFF11096HN/N1,111 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for TFF11096HN/N1,111 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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TFF11096HN/N1,111 information

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Market and Application Analysis of TFF11096HN/N1,111

TFF11096HN/N1,111 is a series of high-performance RF power transistors manufactured by Toshiba Semiconductor. These transistors are specifically designed for use in wireless communication systems and RF power amplification applications, offering excellent performance and reliability.

Market Positioning:

The TFF11096HN/N1,111 series occupies a prominent position in the market for RF power transistors, catering to the needs of various industries such as telecommunications, aerospace, defense, and medical devices. Its high power handling capabilities and wide frequency range make it suitable for a diverse range of applications.

Competitive Advantage:

Compared to other RF power transistors on the market, the TFF11096HN/N1,111 series offers superior performance characteristics, including high power output, low distortion, and excellent linearity. Additionally, these transistors are designed to withstand harsh operating conditions, ensuring long-term reliability and durability.

Future Impact and Technological Advancement:

The TFF11096HN/N1,111 series is poised to play a significant role in the future development of wireless communication systems and RF power amplification technologies. As the demand for higher data rates and expanded coverage continues to grow, there will be an increasing need for advanced RF power transistors capable of delivering high efficiency and performance. The TFF11096HN/N1,111 series is well-positioned to meet these evolving requirements, driving innovation and progress in the industry.

Application Areas:

The TFF11096HN/N1,111 series finds widespread use in various application areas, including:

- Wireless Communication: These transistors are utilized in base stations, repeaters, and mobile devices to amplify RF signals for transmission and reception.

- Radar Systems: The high power output and wide bandwidth of TFF11096HN/N1,111 make them ideal for radar systems used in aerospace, defense, and weather monitoring applications.

- Medical Devices: In medical equipment such as MRI machines and RF ablation systems, these transistors are employed to generate and amplify RF signals for diagnostic and therapeutic purposes.

- Industrial Applications: The TFF11096HN/N1,111 series is also used in industrial automation, remote sensing, and IoT devices where reliable RF power amplification is essential for data transmission and control.

Conclusion:

In conclusion, the TFF11096HN/N1,111 series of RF power transistors from Toshiba Semiconductor offers superior performance, reliability, and versatility, making it an indispensable component in various wireless communication and RF power amplification applications. With its strong market positioning and technological advancement, this series is poised to drive innovation and shape the future of RF power amplification technologies.

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6. What is the process for return or replacement of TFF11096HN/N1,111?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TFF11096HN/N1,111 we delivered, we will accept the replacement or return of the TFF11096HN/N1,111 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TFF11096HN/N1,111.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations