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Name: TC58NVG2S0HBAI4
Brand: Kioxia America, Inc.
SKU: TC58NVG2S0HBAI4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Kioxia America, Inc. TC58NVG2S0HBAI4

Part No.:: TC58NVG2S0HBAI4

Manufacturer:: Kioxia America, Inc.

Package:: 63-VFBGA

Datasheet:: TC58NVG2S0HBAI4.pdf

Description:: IC FLASH 4GBIT PARALLEL 63TFBGA

In Stock:: 3131

Quantity:: Add To Cart

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TC58NVG2S0HBAI4 Specifications

Package/Case:
63-VFBGA
Packaging:
Tray
Series:
-
ProductStatus:
Active
MemoryType:
Non-Volatile
MemoryFormat:
FLASH
Technology:
FLASH - NAND (SLC)
MemorySize:
4Gb (512M x 8)
MemoryInterface:
Parallel
ClockFrequency:
-
WriteCycleTime-WordPage:
25ns
AccessTime:
25 ns
Voltage-Supply:
2.7V ~ 3.6V
OperatingTemperature:
-40°C ~ 85°C (TA)
MountingType:
Surface Mount

TC58NVG2S0HBAI4 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including TC58NVG2S0HBAI4 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for TC58NVG2S0HBAI4 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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TC58NVG2S0HBAI4 information

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TC58NVG2S0HBAI4 Typical application Circuitry

TC58NVG2S0HBAI4

The TC58NVG2S0HBAI4 is part of the TC58 series, a range of NAND flash memory chips manufactured by Toshiba. This series is widely used in various digital applications due to its high storage density, reliability, and fast data transfer rates. The TC58NVG2S0HBAI4, in particular, is known for its large storage capacity and efficient performance, making it suitable for devices like digital cameras, smartphones, and solid-state drives.

1. Power Supply and Voltage Specifications: The TC58NVG2S0HBAI4 typically operates with a specific voltage for its VCC (power supply) pin, usually in the range of 2.7V to 3.6V. Ensuring that the power supply voltage is within this range is crucial for the proper functioning of the memory chip. Additionally, a connection to ground through the VSS pin is essential to stabilize the device and minimize electrical noise.

2. Detailed Pin Configuration for Data Storage and Access: This NAND flash memory chip includes a variety of pins for data storage and retrieval operations. The I/O pins (I/O0 to I/O7) are used for data input and output during read, write, and erase operations. The CLE (Command Latch Enable) and ALE (Address Latch Enable) pins are used to input commands and addresses, respectively. The WE# (Write Enable) and RE# (Read Enable) pins control the timing of writing and reading data to and from the memory array.

3. Control Pins and Their Functions: The TC58NVG2S0HBAI4 features control pins like CE# (Chip Enable) and WP# (Write Protect). The CE# pin is used to activate the chip's interface for communication, while the WP# pin is used to prevent unintended writing to the memory.

4. Incorporation of Diagnostic and Safety Features: The device might include features like ECC (Error Correction Code) to detect and correct data errors, ensuring data reliability. Also, it may have mechanisms for wear leveling and bad block management to prolong the life of the memory.

5. Integration into Circuits and PCB Design Considerations: When integrating the TC58NVG2S0HBAI4 into a circuit, careful planning of the PCB layout is necessary. The layout should minimize signal interference, especially on data lines, and provide stable power and ground connections to ensure reliable memory operations.

6. Compliance with NAND Flash Memory Standards: The TC58NVG2S0HBAI4 adheres to industry standards for NAND flash memory, ensuring compatibility and reliability in a wide range of digital applications.

7. Handling and Installation Precautions: Due to its sensitivity to electrostatic discharge and the precision required in high-density memory operations, the TC58NVG2S0HBAI4 must be handled with care. It's important to follow anti-static precautions and ensure proper soldering techniques during installation.

In summary, the TC58NVG2S0HBAI4 from the TC58 series is a high-capacity NAND flash memory chip, ideal for data storage in digital devices. Its effective use depends on correct power supply application, precise pin configuration for memory operations, use of control pins for command and data management, implementation of diagnostic and safety features, thoughtful PCB design for circuit integration, adherence to NAND flash memory standards, and careful handling during installation. These practices ensure that the TC58NVG2S0HBAI4 functions effectively in its intended applications.

TC58NVG2S0HBAI4 FAQ

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6. What is the process for return or replacement of TC58NVG2S0HBAI4?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TC58NVG2S0HBAI4 we delivered, we will accept the replacement or return of the TC58NVG2S0HBAI4 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TC58NVG2S0HBAI4.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations