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Name: S34ML04G100TFI000
Brand: Cypress Semiconductor Corp
SKU: S34ML04G100TFI000
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Cypress Semiconductor Corp S34ML04G100TFI000

Part No.:: S34ML04G100TFI000

Manufacturer:: Cypress Semiconductor Corp

Package:: 48-TFSOP (0.724, 18.40mm Width)

Datasheet:: S34ML04G100TFI000.pdf

Description:: IC FLASH 4GBIT PARALLEL 48TSOP I

In Stock:: 3509

Quantity:: Add To Cart

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S34ML04G100TFI000 Specifications

Package/Case:
48-TFSOP (0.724, 18.40mm Width)
Packaging:
Tray,Tray
Series:
ML-1
ProductStatus:
Obsolete
MemoryType:
Non-Volatile
MemoryFormat:
FLASH
Technology:
FLASH - NAND
MemorySize:
4Gb (512M x 8)
MemoryInterface:
Parallel
ClockFrequency:
-
WriteCycleTime-WordPage:
25ns
AccessTime:
-
Voltage-Supply:
2.7V ~ 3.6V
OperatingTemperature:
-40°C ~ 85°C (TA)
MountingType:
Surface Mount

S34ML04G100TFI000 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including S34ML04G100TFI000 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for S34ML04G100TFI000 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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S34ML04G100TFI000 information

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S34ML04G100TFI000 Typical application Circuitry

S34ML04G100TFI000

The S34ML04G100TFI000, a part of the S34ML series from Cypress (now part of Infineon Technologies), stands out as a NAND flash memory component, designed primarily for data storage applications across various electronic devices.

1. Series Description: Within the expansive S34ML series, the S34ML04G100TFI000 is recognized for its NAND architecture, offering high-density data storage solutions. This series is widely used in applications requiring substantial and reliable storage, such as in embedded systems, solid-state drives, and other digital storage mediums.

2. Pin Connectivity and Circuit Integration: The S34ML04G100TFI000 features a comprehensive array of pins, each playing a specific role in its operation. These include data input/output (I/O) pins, power supply terminals (VCC), ground connections (VSS), control pins like Chip Enable (CE), Write Enable (WE), Read Enable (RE), and Address Latch Enable (ALE). Accurate connection of these pins is pivotal for the functional integrity of the S34ML04G100TFI000. VCC should be connected to the appropriate voltage level as specified in the datasheet, and VSS to the ground. The I/O pins are used for data transfer, and the control pins are crucial for the correct operation of the memory device, enabling the selection, writing, reading, and addressing of data.

3. Implementing Power Supply Protocols: The S34ML04G100TFI000 operates within a specific voltage range, typically around 3.3 volts. Adherence to the datasheet's voltage specifications is vital. Implementing precise voltage regulation and using decoupling capacitors help in maintaining a stable power supply and protecting the device from power surges.

4. Peripheral and System Interface: Connecting the S34ML04G100TFI000 to a system involves careful planning. The data I/O pins must be linked to the host system's memory bus. The control pins like CE, WE, RE, and ALE must be correctly interfaced with the system's control lines to ensure proper command execution and data flow.

5. Programming and Configuration Aspects: The S34ML04G100TFI000, being a NAND flash memory, requires an understanding of its programming algorithms for storing and retrieving data. This involves configuring the system's memory controller to interface correctly with the flash memory, understanding the device's block and page structure, and implementing appropriate error-correction codes (ECC) for data integrity.

6. Guidelines for PCB Layout: When designing a PCB for the S34ML04G100TFI000, consider the package footprint and pinout of the device. Adequate space must be allocated for the memory chip and its connections. Trace routing should minimize signal interference and optimize signal integrity, particularly for the data I/O and control lines.

7. Electrostatic Discharge (ESD) and Safety Measures: Handling the S34ML04G100TFI000 necessitates precautions against ESD. Implementing ESD protection during handling and storage, and using current-limiting resistors where necessary, can prevent damage to the memory device.

In conclusion, the S34ML04G100TFI000 is an essential component in high-density data storage applications, offering reliable and efficient performance. Its effectiveness hinges on meticulous attention to power management, precise peripheral and system interfacing, programming, PCB design considerations, and stringent safety measures.

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6. What is the process for return or replacement of S34ML04G100TFI000?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the S34ML04G100TFI000 we delivered, we will accept the replacement or return of the S34ML04G100TFI000 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of S34ML04G100TFI000.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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