MT47H32M16NF-25E IT:H TR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT47H32M16NF-25E IT:H TR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT47H32M16NF-25E IT:H TR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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1. Series Characteristics: The MT47H32M16NF-25E IT:H TR belongs to a series that sets a benchmark in DRAM technology, offering modules that provide substantial storage capacity coupled with rapid access times. Engineered to address the demanding needs of modern technological systems, these modules ensure that devices equipped with this memory can handle extensive data-intensive tasks efficiently and reliably.
2. Pin Configuration and Usage: The MT47H32M16NF-25E IT:H TR features a detailed pin layout designed to optimize functionality across various system architectures. This includes power supply pins (VDD for power and VSS for ground), data input/output lines (DQ0-DQ15 for a 16-bit data bus), address inputs (A0-A12 for row and column addressing), bank address inputs (BA0 and BA1 for selecting memory banks), and control signals (RAS#, CAS#, WE# for row access strobe, column access strobe, and write enable, respectively). It also includes a clock input (CLK) for timing synchronization. This configuration is critical for efficient power management and data communication, essential for the module's performance within memory systems.
3. Data Transmission Efficiency: The MT47H32M16NF-25E IT:H TR is equipped with state-of-the-art data transmission interfaces that enable high-speed communication, vital for applications requiring rapid memory access and processing. Adhering to industry-standard protocols, these interfaces ensure the module's compatibility with a broad range of system designs, facilitating efficient and reliable data exchange.
4. Optimized Power Consumption: The design of the MT47H32M16NF-25E IT:H TR emphasizes energy efficiency, enabling the module to deliver high-speed performance while minimizing power usage. This efficiency is crucial for reducing the overall energy demands of the systems it is used in, contributing to more sustainable and cost-effective technology solutions.
5. Advanced Control and Error Correction: Incorporating sophisticated control mechanisms and error correction features, the module manages data integrity and flow. These systems are key to the MT47H32M16NF-25E IT:H TR's ability to provide consistent, error-free performance, ensuring system reliability and stability in data processing and storage.
6. Signal Integrity Measures: The module includes measures to enhance signal integrity, such as integrated termination resistors and optimized signal pathways. These measures help reduce noise and interference, ensuring clear, reliable data transmission and enhancing the module's overall performance.
7. Reliability and Durability Features: The design of the MT47H32M16NF-25E IT:H TR features enhancements aimed at improving its reliability and durability, including robust power decoupling and advanced packaging technologies. These features help stabilize the power supply and protect the module from environmental and electrical stresses, ensuring long-term performance and reliability.
8. Quality Assurance Compliance: Adhering to stringent quality assurance standards, the production of the MT47H32M16NF-25E IT:H TR ensures that each module meets high performance and reliability criteria. This commitment to quality is essential for maintaining the integrity and dependability of the memory solutions within this series.
9. Safety and Protection Protocols: Integrated safety and protection protocols in the design of the MT47H32M16NF-25E IT:H TR safeguard against potential risks such as electrostatic discharge (ESD) and overvoltage. These protocols are crucial for the safe operation of the module in various applications, protecting both the module and the system it is part of.
In conclusion, the MT47H32M16NF-25E IT:H TR exemplifies the forefront of DRAM module technology, offering an ideal blend of storage capacity, speed, and reliability, with added emphasis on operating in industrial temperature ranges. Its comprehensive pin layout and design features ensure it is well-suited for a wide range of demanding applications, marking it as an essential component in the development of high-performance and resilient digital systems.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of MT47H32M16NF-25E IT:H TR.
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