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Micron Technology Inc. MT47H32M16NF-25E:H TR

Part No.:: MT47H32M16NF-25E:H TR

Manufacturer:: Micron Technology Inc.

Package:: 84-TFBGA

Datasheet:

Description:: IC DRAM 512MBIT PARALLEL 84FBGA

In Stock:: 3043

Quantity:: Add To Cart

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MT47H32M16NF-25E:H TR Specifications

Package/Case:
84-TFBGA
Packaging:
Tape & Reel (TR)
Series:
Automotive, AEC-Q100
ProductStatus:
Active
MemoryType:
Volatile
MemoryFormat:
DRAM
Technology:
SDRAM - DDR2
MemorySize:
512Mb (32M x 16)
MemoryInterface:
Parallel
ClockFrequency:
400 MHz
WriteCycleTime-WordPage:
15ns
AccessTime:
400 ps
Voltage-Supply:
1.7V ~ 1.9V
OperatingTemperature:
0°C ~ 85°C (TC)
MountingType:
Surface Mount

MT47H32M16NF-25E:H TR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT47H32M16NF-25E:H TR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT47H32M16NF-25E:H TR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MT47H32M16NF-25E:H TR information

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MT47H32M16NF-25E:H TR Typical application Circuitry

MT47H32M16NF-25E H TR

The MT47H32M16NF-25E:H TR is a dynamic random-access memory (DRAM) module from a series known for its high capacity and fast data transfer rates, making it an essential component in a wide range of applications, including computing, networking, and digital consumer electronics. This series is specifically engineered to meet the high-performance requirements of modern digital systems, offering reliability, speed, and efficiency. The "TR" designation indicates that this module is provided in tape and reel packaging, which is ideal for automated assembly processes in high-volume production environments.

1. Series Attributes: The MT47H32M16NF-25E:H TR belongs to a series that represents a significant advancement in DRAM technology, characterized by modules that provide substantial storage capacity along with rapid access capabilities. Engineered to support the demanding needs of contemporary technology systems, these modules ensure that devices equipped with this memory can efficiently handle extensive data-intensive tasks.

2. Pin Configuration and Implementation: The MT47H32M16NF-25E:H TR features a meticulously designed pin layout to optimize performance across various system architectures. This includes power supply pins (VDD for power and VSS for ground), data input/output lines (DQ0-DQ15, supporting a 16-bit data bus), address inputs (A0-A12 for row and column addressing), bank address inputs (BA0 and BA1 for selecting memory banks), and control signals (RAS#, CAS#, and WE# for row access strobe, column access strobe, and write enable, respectively). Additionally, it includes a clock input (CLK) for synchronization. This arrangement ensures efficient power management and data communication, vital for the module's integration and performance within memory systems.

3. High-Speed Data Exchange: The MT47H32M16NF-25E:H TR is equipped with cutting-edge interfaces for data transmission, enabling high-speed communication crucial for applications requiring quick memory access and processing. These interfaces conform to established industry standards, ensuring compatibility with a wide range of system designs and facilitating reliable data exchange.

4. Energy Efficiency Design: Emphasizing energy efficiency, the MT47H32M16NF-25E:H TR's design allows for high-speed performance while minimizing power consumption. This efficiency is crucial for reducing the energy requirements of the systems in which it is utilized, contributing to more sustainable and economically viable technology solutions.

5. Advanced Control and Error Management: Incorporating sophisticated control mechanisms and error management features, the module oversees data integrity and flow. These features are key to the MT47H32M16NF-25E:H TR's ability to provide consistent, error-free performance, ensuring reliability and stability in data processing and storage.

6. Signal Integrity Optimization: The module includes measures to enhance signal integrity, such as integrated termination resistors and optimized signal pathways. These measures reduce noise and interference, ensuring clear, reliable data transmission and enhancing overall performance.

7. Reliability and Durability Enhancements: Design features aimed at boosting the module's reliability and durability include robust power decoupling and advanced packaging technologies. These enhancements help stabilize the power supply and protect the module from environmental and electrical stresses, ensuring sustained performance and reliability.

8. Quality Assurance Standards: Adhering to stringent quality assurance standards, the production of the MT47H32M16NF-25E:H TR ensures that each module meets high levels of performance and reliability. This commitment to quality is essential for maintaining the integrity and dependability of the memory solutions within this series.

9. Safety and Protection Measures: Integrated safety and protection protocols guard against potential risks such as electrostatic discharge (ESD) and overvoltage, ensuring the module's safe operation across various applications and protecting both the module and the system it integrates with.

In summary, the MT47H32M16NF-25E:H TR exemplifies the latest in DRAM module technology, offering an ideal combination of storage capacity, speed, and reliability. Its detailed pin layout and thoughtful design considerations make it well-suited for a broad spectrum of demanding applications, marking it as a crucial component in the development of advanced digital systems.

MT47H32M16NF-25E:H TR FAQ

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3. Are the MT47H32M16NF-25E:H TR price and inventory displayed accurate?

The price and inventory of MT47H32M16NF-25E:H TR fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of MT47H32M16NF-25E:H TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MT47H32M16NF-25E:H TR we delivered, we will accept the replacement or return of the MT47H32M16NF-25E:H TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MT47H32M16NF-25E:H TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations