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Micron Technology Inc. MT47H32M16NF-25E AIT:H TR

Part No.:: MT47H32M16NF-25E AIT:H TR

Manufacturer:: Micron Technology Inc.

Package:: 84-TFBGA

Datasheet:

Description:: IC DRAM 512MBIT PARALLEL 84FBGA

In Stock:: 2002

Quantity:: Add To Cart

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MT47H32M16NF-25E AIT:H TR Specifications

Package/Case:
84-TFBGA
Packaging:
Tape & Reel (TR)
Series:
Automotive, AEC-Q100
ProductStatus:
Last Time Buy
MemoryType:
Volatile
MemoryFormat:
DRAM
Technology:
SDRAM - DDR2
MemorySize:
512Mb (32M x 16)
MemoryInterface:
Parallel
ClockFrequency:
400 MHz
WriteCycleTime-WordPage:
15ns
AccessTime:
400 ps
Voltage-Supply:
1.7V ~ 1.9V
OperatingTemperature:
-40°C ~ 85°C (TA)
MountingType:
Surface Mount

MT47H32M16NF-25E AIT:H TR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT47H32M16NF-25E AIT:H TR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT47H32M16NF-25E AIT:H TR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MT47H32M16NF-25E AIT:H TR information

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MT47H32M16NF-25E AIT:H TR Typical application Circuitry

MT47H32M16NF-25E AIT H TR

The MT47H32M16NF-25E AIT:H TR is a dynamic DRAM module that belongs to a series celebrated for its high-density memory capacity and swift data processing capabilities, making it an ideal component for a wide range of demanding applications. These applications span from advanced computing systems and servers to sophisticated telecommunications equipment, where the reliability and speed of memory access are critical. The "TR" suffix indicates that this variant of the module is provided in tape and reel packaging, which is commonly used for automated manufacturing processes, highlighting its suitability for large-scale production and deployment in various technological environments.

1. Series Innovation: The MT47H32M16NF-25E AIT:H TR is part of a series that represents the pinnacle of DRAM technology, offering modules that combine extensive storage capacities with fast access times. This series is engineered to meet the complex requirements of contemporary digital systems, ensuring that devices equipped with these memory modules are capable of handling intensive data processing tasks with efficiency and reliability.

2. Detailed Pin Layout: The MT47H32M16NF-25E AIT:H TR features a comprehensive pin configuration, meticulously designed to optimize functionality across different system architectures. The pin layout includes power supply pins (VDD for power and VSS for ground), data input/output lines (DQ0-DQ15 for a 16-bit interface), address inputs (A0-A12 for row and column addressing), bank address inputs (BA0 and BA1 for bank selection), control signals (RAS#, CAS#, WE# for row access strobe, column access strobe, and write enable, respectively), and a clock input (CLK) for synchronization. This precise configuration facilitates efficient power management and data communication, essential for the module's integration and performance within memory systems.

3. High-Speed Data Transmission: Equipped with advanced data transmission interfaces, the MT47H32M16NF-25E AIT:H TR enables high-speed communication, crucial for applications that require rapid access to and processing of large volumes of data. These interfaces adhere to industry-standard protocols, ensuring the module's compatibility with a broad range of system designs and facilitating efficient, reliable data exchange.

4. Energy Efficiency Design: The design of the MT47H32M16NF-25E AIT:H TR prioritizes energy efficiency, allowing the module to deliver high-speed performance while minimizing power consumption. This energy-efficient operation is key to reducing the overall energy demands of the systems it powers, contributing to more sustainable and cost-effective technological solutions.

5. Advanced Control and Error Management: The module includes sophisticated control mechanisms and error management features that oversee data integrity and flow. These features are integral to the MT47H32M16NF-25E AIT:H TR's ability to provide consistent, error-free performance, ensuring system reliability and stability in data processing and storage operations.

6. Signal Integrity Measures: To maintain signal integrity, the MT47H32M16NF-25E AIT:H TR incorporates various measures, such as integrated termination resistors and optimized signal pathways. These measures help reduce noise and interference, ensuring clear, reliable data transmission and improving the overall performance of the memory module.

7. Reliability and Durability Enhancements: The design of the MT47H32M16NF-25E AIT:H TR features enhancements aimed at boosting its reliability and durability, including robust power decoupling and advanced packaging technologies. These enhancements help stabilize the power supply and protect the module from environmental and electrical stresses, ensuring long-term performance and reliability.

8. Quality Assurance Compliance: The production of the MT47H32M16NF-25E AIT:H TR adheres to stringent quality assurance standards, ensuring that each module meets high performance and reliability criteria. This commitment to quality is essential for maintaining the integrity and dependability of the memory solutions within this series.

9. Safety and Protection Protocols: Integrated safety and protection protocols in the design of the MT47H32M16NF-25E AIT:H TR guard against potential risks such as electrostatic discharge (ESD) and overvoltage. These protocols are crucial for the safe operation of the module in various applications, protecting both the module and the system it is part of.

In summary, the MT47H32M16NF-25E AIT:H TR exemplifies advanced DRAM module technology, offering a harmonious blend of storage capacity, speed, and reliability. Its comprehensive pin layout and design features ensure it is perfectly suited for a wide array of demanding applications, marking it as an essential component in the development of high-performance digital systems.

MT47H32M16NF-25E AIT:H TR FAQ

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6. What is the process for return or replacement of MT47H32M16NF-25E AIT:H TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MT47H32M16NF-25E AIT:H TR we delivered, we will accept the replacement or return of the MT47H32M16NF-25E AIT:H TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MT47H32M16NF-25E AIT:H TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations