MT47H32M16NF-25E AIT:H this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT47H32M16NF-25E AIT:H price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT47H32M16NF-25E AIT:H to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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1. Series Features: The MT47H32M16NF-25E AIT:H is integrated within a series that exemplifies the latest advancements in DRAM technology, offering modules that provide significant storage capacity along with rapid data access speeds. This series is engineered to support the complex demands of contemporary technology systems, ensuring that devices equipped with these memory modules can handle intensive data processing tasks effectively.
2. Pin Configuration and Connectivity: The MT47H32M16NF-25E AIT:H is meticulously designed with a detailed pin layout to ensure optimal functionality within various system architectures. The configuration includes pins allocated for power supply (VDD for power and VSS for ground), data input/output (DQ0-DQ15 for a 16-bit interface), address inputs (A0-A12 for row and column addressing), bank address inputs (BA0 and BA1 for selecting memory banks), and control signals (RAS#, CAS#, WE# for row access strobe, column access strobe, and write enable, respectively), along with a clock input (CLK) for timing synchronization. This precise arrangement of pins facilitates efficient power management and data transfer, critical for the module's performance and integration into memory systems.
3. High-Speed Data Transmission: The MT47H32M16NF-25E AIT:H boasts advanced interfaces for data transmission, enabling high-speed communication essential for applications that demand quick access to and processing of large data volumes. These interfaces conform to industry-standard protocols, ensuring the module's compatibility with a wide range of system designs and facilitating reliable data exchange.
4. Energy Efficiency: In its design, the MT47H32M16NF-25E AIT:H emphasizes energy efficiency, allowing the module to deliver high-speed performance while minimizing power consumption. This energy-efficient operation is crucial for reducing the overall energy demands of the systems it is utilized in, contributing to more sustainable and cost-effective technology solutions.
5. Advanced Control and Error Management: The module incorporates sophisticated control mechanisms and error management features to oversee data integrity and flow. These features are fundamental to the MT47H32M16NF-25E AIT:H's ability to provide consistent, error-free performance, ensuring system reliability and stability in data processing and storage operations.
6. Signal Integrity Measures: The MT47H32M16NF-25E AIT:H includes various measures to enhance signal integrity, such as integrated termination resistors and optimized signal pathways. These measures are designed to minimize noise and interference, ensuring clear, reliable data transmission and improving the overall performance of the memory module.
7. Reliability and Durability Design: The design of the MT47H32M16NF-25E AIT:H features elements aimed at enhancing its reliability and durability, including robust power decoupling and advanced packaging technologies. These elements help stabilize the power supply and protect the module from environmental and electrical stresses, ensuring long-term performance and reliability.
8. Quality Assurance Standards: The production of the MT47H32M16NF-25E AIT:H adheres to stringent quality assurance standards, ensuring that each module meets high levels of performance and reliability. This commitment to quality is crucial for maintaining the integrity and dependability of the memory solutions within this series.
9. Safety and Protection Protocols: The MT47H32M16NF-25E AIT:H is designed with integrated safety and protection protocols to mitigate potential risks such as electrostatic discharge (ESD) and overvoltage. These protocols are essential for the safe operation of the module in various applications, protecting both the module and the system it is part of.
In summary, the MT47H32M16NF-25E AIT:H exemplifies the forefront of DRAM module technology, offering an optimal blend of storage capacity, speed, and reliability. Its comprehensive pin layout and design considerations ensure it is ideally suited for a wide range of demanding applications, establishing it as a vital component in the advancement of high-performance digital systems.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of MT47H32M16NF-25E AIT:H.
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