MT47H32M16NF-25E AAT:H this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT47H32M16NF-25E AAT:H price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT47H32M16NF-25E AAT:H to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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1. Series Excellence: The MT47H32M16NF-25E AAT:H belongs to a series that epitomizes the advancement in memory technology, offering modules that combine high storage capacity with rapid data access speeds. This series is engineered to support the needs of cutting-edge technology applications, ensuring that systems equipped with these memory modules can efficiently handle complex and data-intensive tasks.
2. Pin Configuration and Functionality: The MT47H32M16NF-25E AAT:H features a meticulously organized pin layout, with each pin designated for specific functions to optimize the module's performance and compatibility across different system architectures. The configuration includes power supply pins (VDD and VSS for power and ground, respectively), data input/output lines (DQ0-DQ15 for a 16-bit data bus), address pins (A0-A12 for row and column addressing), bank address pins (BA0 and BA1 for bank selection), control signals (such as RAS#, CAS#, and WE# for row access strobe, column access strobe, and write enable, respectively), and clock inputs (CLK) for timing control. This precise pin arrangement is crucial for the efficient management of power and data flow within the memory system.
3. High-Speed Data Transfer Capabilities: The MT47H32M16NF-25E AAT:H is equipped with advanced data transfer interfaces that enable high-speed communication, essential for applications that demand quick access to large amounts of data. These interfaces are designed in accordance with industry-standard protocols, ensuring broad compatibility and seamless integration with various system designs, thus facilitating efficient and reliable data exchange.
4. Energy Efficiency Considerations: In its design, the MT47H32M16NF-25E AAT:H emphasizes energy efficiency, allowing the module to deliver exceptional performance while maintaining low power consumption. This energy-efficient operation is key to reducing the overall energy demands of the systems it is used in, contributing to more sustainable and cost-effective technology solutions.
5. Advanced Control and Error Management: The module includes sophisticated control mechanisms and error management features that oversee data integrity and flow. These systems are integral to the MT47H32M16NF-25E AAT:H's ability to provide consistent, error-free performance, ensuring reliability and stability in data processing and storage operations.
6. Signal Integrity Enhancements: To ensure signal integrity, the MT47H32M16NF-25E AAT:H incorporates various measures, including integrated termination resistors and optimized signal pathways. These features are designed to minimize noise and interference, ensuring clear, reliable data transmission and enhancing the overall performance of the memory module.
7. Reliability and Durability Features: The design of the MT47H32M16NF-25E AAT:H includes features aimed at enhancing its reliability and durability, such as robust power decoupling and advanced packaging technologies. These features help to stabilize the power supply and protect the module from environmental and electrical stresses, ensuring long-term performance and reliability.
8. Quality Assurance Standards: The production of the MT47H32M16NF-25E AAT:H follows stringent quality assurance protocols, ensuring that each module meets high standards of performance and reliability. This commitment to quality is crucial for maintaining the integrity and dependability of the memory solutions within this series.
9. Safety and Protection Measures: The design of the MT47H32M16NF-25E AAT:H incorporates safety and protection measures to guard against potential risks such as electrostatic discharge (ESD) and overvoltage. These measures are essential for the safe operation of the module in various applications, protecting both the module and the system it is part of.
In conclusion, the MT47H32M16NF-25E AAT:H represents a significant advancement in DRAM module technology, offering an ideal combination of storage capacity, speed, and reliability. Its detailed pin layout and design features ensure it is perfectly suited for a wide range of demanding applications, making it a vital component in the development of high-performance digital systems.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of MT47H32M16NF-25E AAT:H.
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