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Name: MT41K256M16HA-125 V:E
Brand: Micron Technology Inc.
SKU: MT41K256M16HA-125 V:E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Micron Technology Inc. MT41K256M16HA-125 V:E

Part No.:: MT41K256M16HA-125 V:E

Manufacturer:: Micron Technology Inc.

Package:: 96-TFBGA

Datasheet:: MT41K256M16HA-125 V:E.pdf

Description:: IC DRAM 4GBIT PARALLEL 96FBGA

In Stock:: 2797

Quantity:: Add To Cart

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MT41K256M16HA-125 V:E Specifications

Package/Case:
96-TFBGA
Packaging:
Tray
Series:
-
ProductStatus:
Obsolete
MemoryType:
Volatile
MemoryFormat:
DRAM
Technology:
SDRAM - DDR3L
MemorySize:
4Gb (256M x 16)
MemoryInterface:
Parallel
ClockFrequency:
800 MHz
WriteCycleTime-WordPage:
-
AccessTime:
13.75 ns
Voltage-Supply:
1.283V ~ 1.45V
OperatingTemperature:
0°C ~ 95°C (TC)
MountingType:
Surface Mount

MT41K256M16HA-125 V:E this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT41K256M16HA-125 V:E price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT41K256M16HA-125 V:E to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MT41K256M16HA-125 V:E information

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MT41K256M16HA-125 V:E Typical application Circuitry

MT41K256M16HA-125 V E

The MT41K256M16HA-125 V:E is a state-of-the-art dynamic random-access memory (DRAM) module, constructed specifically to serve high-speed data storage and retrieval tasks. Its design centers around ensuring rapid memory operations, a feature that becomes indispensable in scenarios demanding immediate data access.

Application Scenarios: High-performance computing systems are an evident domain where the MT41K256M16HA-125 V:E finds extensive use. Within these systems, the chip is often employed as system memory, acting as a bridge between the central processing unit (CPU) and long-term storage devices.

Principal Parameters: Boasting 4 Gigabits of storage capacity, the MT41K256M16HA-125 V:E operates with a nominal supply voltage of 1.25V. It provides a data width of 16 bits and is capable of performing at clock speeds that are particularly tailored for top-tier applications, making high-speed data operations feasible.

Circuit Connection for High-Performance Computing Systems

1. Module Activation:

- Chip Enable: Wire the CE (Chip Enable) pin of the MT41K256M16HA-125 V:E to the control bus of the CPU.

- Explanation: This connection ensures the DRAM module is active when the CPU requires data storage or retrieval.

2. Specifying Memory Location:

- Addressing Scheme: Wire the address pins (A0-Ax) of the chip to the address bus of the CPU.

- Explanation: This setup allows the CPU to determine the precise memory location it intends to read from or write to.

3. Data Transactions:

- Bus Integration: Connect the D0-D15 data pins of the MT41K256M16HA-125 V:E directly to the data bus of the CPU.

- Explanation: This linkage ensures seamless and bidirectional data transfers.

4. Operational Synchronization:

- Clock Input: The CLK input of the MT41K256M16HA-125 V:E needs to be in sync with the memory clock of the CPU.

- Explanation: Such synchronization assures operations in tandem with the CPU's rhythm.

Design Considerations

1. Stable Power Delivery:

- Decoupling Strategy: Position decoupling capacitors adjacent to the VDD and VSS pins of the MT41K256M16HA-125 V:E.

- Explanation: Such capacitors can mitigate power supply noises, guaranteeing the chip's undisturbed operation.

2. Ensuring Reliable Data Transactions:

- Line Stabilizers: Consider integrating pull-up or pull-down resistors on the data lines.

- Explanation: These resistors can prevent data line floating states, ensuring the fidelity of data transfers.

3. Temperature Regulation:

- Cooling Provisions: Given that the MT41K256M16HA-125 V:E might experience thermal variations, consider employing heatsinks or thermal pads.

- Explanation: Adequate cooling mechanisms prevent potential thermal throttling or damage.

In essence, while the MT41K256M16HA-125 V:E offers impressive capabilities, its integration into systems demands meticulous attention. From ensuring precise connections to overseeing thermal regulations, ensuring these aspects are in place can significantly enhance the efficiency and longevity of setups leveraging this DRAM module.

MT41K256M16HA-125 V:E FAQ

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3. Are the MT41K256M16HA-125 V:E price and inventory displayed accurate?

The price and inventory of MT41K256M16HA-125 V:E fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of MT41K256M16HA-125 V:E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MT41K256M16HA-125 V:E we delivered, we will accept the replacement or return of the MT41K256M16HA-125 V:E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MT41K256M16HA-125 V:E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations