MT40A512M16TB-062E:R this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT40A512M16TB-062E:R price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT40A512M16TB-062E:R to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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1. Series Characteristics: The MT40A512M16TB-062E:R belongs to a DDR4 SDRAM series that sets a new standard in high-speed data transfer and energy efficiency. This series is engineered to support the demanding data throughput and power efficiency requirements of modern digital systems, ensuring that devices equipped with these memory modules can handle extensive data-intensive tasks with enhanced performance.
2. Pin Configuration and Implementation: The MT40A512M16TB-062E:R features a complex pin layout designed to maximize functionality and compatibility across different system architectures. The pin arrangement includes power supply pins (VDD and VDDQ for power, VSS for ground), data input/output lines (DQ0-DQ15 for a 16-bit interface), address and command pins (including RAS, CAS, WE, BA0-BA2 for bank address, A0-A16 for address inputs), clock signals (CK_t, CK_c for differential clock pairs), and control signals (such as CS, CKE, ODT for chip select, clock enable, and on-die termination, respectively). This configuration is essential for efficient communication and power management within memory systems, facilitating high-speed data transfer and low power operation.
3. High-Speed Data Exchange: The MT40A512M16TB-062E:R is equipped with high-speed interfaces that enable rapid data communication, critical for applications requiring fast memory access and high bandwidth. These interfaces adhere to the DDR4 SDRAM standard, which provides improved performance and bandwidth over previous generations, ensuring the module's broad compatibility with various system designs and facilitating efficient, reliable data exchange.
4. Optimized Power Consumption: Reflecting the DDR4 standard's focus on energy efficiency, the MT40A512M16TB-062E:R's design emphasizes reduced power consumption. This efficiency is crucial for minimizing the overall energy requirements of the systems it is used in, contributing to more sustainable and cost-effective technology solutions.
5. Advanced Control and Error Correction: Incorporating DDR4's advanced control mechanisms and error correction features, the module manages data integrity and flow. These features are key to the MT40A512M16TB-062E:R's ability to provide consistent, error-free performance, ensuring system reliability and stability in data processing and storage operations.
6. Signal Integrity Measures: To ensure signal integrity, the MT40A512M16TB-062E:R includes measures such as POD (Pseudo Open Drain) signaling and optimized signal pathways. These measures help reduce noise and interference, ensuring clear, reliable data transmission and enhancing the module's overall performance.
7. Reliability and Durability Design: The design of the MT40A512M16TB-062E:R features enhancements aimed at improving its reliability and durability, including robust power decoupling and advanced packaging technologies. These features help stabilize the power supply and protect the module from environmental and electrical stresses, ensuring long-term performance and reliability.
8. Quality Assurance Standards: Adhering to stringent quality assurance standards, the production of the MT40A512M16TB-062E:R ensures that each module meets high levels of performance and reliability. This commitment to quality is essential for maintaining the integrity and dependability of the memory solutions within this series.
9. Safety and Protection Protocols: Integrated safety and protection protocols in the design of the MT40A512M16TB-062E:R guard against potential risks such as electrostatic discharge (ESD) and overvoltage. These protocols are crucial for the safe operation of the module in various applications, protecting both the module and the system it is part of.
In summary, the MT40A512M16TB-062E:R exemplifies the advancements in DDR4 SDRAM technology, offering an optimal combination of speed, capacity, and energy efficiency. Its detailed pin layout and design considerations ensure it is ideally suited for a wide range of high-performance applications, making it a key component in the development of advanced digital systems.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of MT40A512M16TB-062E:R.
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