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Micron Technology Inc. MT40A1G8SA-075:E TR

Part No.:: MT40A1G8SA-075:E TR

Manufacturer:: Micron Technology Inc.

Package:: 78-TFBGA

Datasheet:: MT40A1G8SA-075:E TR.pdf

Description:: IC DRAM 8GBIT PARALLEL 78FBGA

In Stock:: 2061

Quantity:: Add To Cart

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MT40A1G8SA-075:E TR Specifications

Package/Case:
78-TFBGA
Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Active
MemoryType:
Volatile
MemoryFormat:
DRAM
Technology:
SDRAM - DDR4
MemorySize:
8Gb (1G x 8)
MemoryInterface:
Parallel
ClockFrequency:
1.33 GHz
WriteCycleTime-WordPage:
-
AccessTime:
-
Voltage-Supply:
1.14V ~ 1.26V
OperatingTemperature:
0°C ~ 95°C (TC)
MountingType:
Surface Mount

MT40A1G8SA-075:E TR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT40A1G8SA-075:E TR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT40A1G8SA-075:E TR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MT40A1G8SA-075:E TR information

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MT40A1G8SA-075:E TR Typical application Circuitry

MT40A1G8SA-075 E TR

The MT40A1G8SA-075:E TR is a cutting-edge DDR4 SDRAM module that stands out in a series designed for high-performance and high-efficiency memory solutions. This module caters to a broad spectrum of advanced computing applications, including servers, workstations, and networking devices, where speed, capacity, and power efficiency are paramount. The DDR4 technology underlying this series offers significant improvements over previous generations in terms of data rate, power consumption, and reliability. The "TR" designation indicates that this module is supplied in tape and reel packaging, which is optimized for automated assembly processes in large-scale manufacturing.

1. Series Advancements: The MT40A1G8SA-075:E TR is part of a DDR4 SDRAM series that embodies the latest advancements in memory technology. This series is known for its ability to provide large storage capacities and fast data access speeds while operating at lower voltages, thereby enhancing the overall performance and energy efficiency of the systems in which they are used.

2. Pin Configuration and Implementation: The MT40A1G8SA-075:E TR features a comprehensive pin layout tailored to ensure maximum compatibility and performance across diverse system architectures. This includes pins dedicated to the power supply (VDD for core power, VDDQ for I/O power, and VSS for ground), data input/output lines (DQ0-DQn, accommodating the module's bit width), address and command signals (including RAS, CAS, WE, along with BA0-BAx for bank address and A0-Ax for row/column addressing), clock inputs (CK_t and CK_c for differential signaling), and various control pins (such as CS, CKE, ODT, and RESET for chip select, clock enable, on-die termination, and reset, respectively). This intricate pin arrangement is crucial for facilitating high-speed data transfer, efficient power management, and optimal signal integrity.

3. Data Transmission Capabilities: The MT40A1G8SA-075:E TR is equipped with sophisticated interfaces designed for high-speed data communication, meeting the demanding requirements of applications that necessitate quick memory access and large bandwidth. By adhering to the DDR4 SDRAM standard, these interfaces provide enhanced performance compared to previous generations, ensuring seamless integration with a variety of system designs and enabling efficient, reliable data exchange.

4. Optimized Power Consumption: Reflecting the DDR4 standard's emphasis on energy efficiency, the MT40A1G8SA-075:E TR's design focuses on reducing power consumption without compromising performance. This approach significantly lowers the energy requirements of the systems it powers, contributing to more environmentally friendly and cost-effective technological solutions.

5. Advanced Control and Error Correction: Incorporating advanced DDR4 control mechanisms and error correction features, the MT40A1G8SA-075:E TR ensures data integrity and smooth data flow. These features are essential for the module's ability to deliver consistent, error-free performance, guaranteeing system reliability and stability in various data processing and storage applications.

6. Signal Integrity Measures: To maintain signal integrity, the MT40A1G8SA-075:E TR incorporates measures such as improved signaling techniques and optimized signal paths. These measures are designed to minimize noise and interference, ensuring clear, reliable data transmission and contributing to the module's superior performance.

7. Reliability and Durability Design: The design of the MT40A1G8SA-075:E TR includes features aimed at enhancing its reliability and durability, such as robust power decoupling and advanced packaging technologies. These features help stabilize the power supply and protect the module from environmental and electrical stresses, ensuring sustained performance and long-term reliability.

8. Quality Assurance Standards: The production of the MT40A1G8SA-075:E TR adheres to strict quality assurance protocols, ensuring that each module meets the highest standards of performance and reliability. This rigorous quality control is crucial for maintaining the integrity and dependability of the memory solutions within this DDR4 series.

9. Safety and Protection Protocols: Integrated safety and protection protocols in the MT40A1G8SA-075:E TR's design guard against potential risks such as electrostatic discharge (ESD) and overvoltage. These protocols are essential for the safe operation of the module in a wide range of applications, protecting both the module and the systems it integrates with.

In summary, the MT40A1G8SA-075:E TR exemplifies the latest in DDR4 SDRAM technology, offering an optimal blend of speed, capacity, and energy efficiency. Its detailed pin layout and thoughtful design considerations ensure it is ideally suited for a broad spectrum of demanding applications, marking it as a crucial component in the advancement of high-performance digital systems.

MT40A1G8SA-075:E TR FAQ

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6. What is the process for return or replacement of MT40A1G8SA-075:E TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MT40A1G8SA-075:E TR we delivered, we will accept the replacement or return of the MT40A1G8SA-075:E TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MT40A1G8SA-075:E TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations