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Name: MT29F2G08ABAGAWP-IT:G TR
Brand: Micron Technology Inc.
SKU: MT29F2G08ABAGAWP-IT:G TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Micron Technology Inc. MT29F2G08ABAGAWP-IT:G TR

Part No.:: MT29F2G08ABAGAWP-IT:G TR

Manufacturer:: Micron Technology Inc.

Package:: 48-TFSOP (0.724, 18.40mm Width)

Datasheet:

Description:: IC FLASH 2GBIT PARALLEL 48TSOP I

In Stock:: 3267

Quantity:: Add To Cart

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MT29F2G08ABAGAWP-IT:G TR Specifications

Package/Case:
48-TFSOP (0.724, 18.40mm Width)
Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
MemoryType:
Non-Volatile
MemoryFormat:
FLASH
Technology:
FLASH - NAND
MemorySize:
2Gb (256M x 8)
MemoryInterface:
Parallel
ClockFrequency:
-
WriteCycleTime-WordPage:
-
AccessTime:
-
Voltage-Supply:
2.7V ~ 3.6V
OperatingTemperature:
-40°C ~ 85°C (TA)
MountingType:
Surface Mount

MT29F2G08ABAGAWP-IT:G TR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MT29F2G08ABAGAWP-IT:G TR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MT29F2G08ABAGAWP-IT:G TR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MT29F2G08ABAGAWP-IT:G TR information

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MT29F2G08ABAGAWP-IT:G TR Typical application Circuitry

MT29F2G08ABAGAWP-IT:G TR is a specific type of NAND Flash memory produced by Micron Technology, characterized by its storage capacity, durability, and speed, making it ideal for a wide range of applications. This memory component finds its utility in environments where data integrity, storage density, and endurance are paramount.

Utilization Scenarios for MT29F2G08ABAGAWP-IT:G TR

Automotive Applications: The MT29F2G08ABAGAWP-IT:G TR is extensively used in the automotive industry, particularly in infotainment systems, advanced driver-assistance systems (ADAS), and other onboard control units requiring reliable long-term data storage.

Principal Parameters and Features

- Storage Capacity: The MT29F2G08ABAGAWP-IT:G TR boasts a storage capability of 2 Gigabits, accommodating substantial amounts of data.

- Data Transfer Interface: This memory employs a parallel interface, facilitating efficient data exchanges between the NAND Flash and the host controller.

- Durability and Endurance: Tailored for robust applications, it incorporates features to enhance data retention and tolerate extensive read/write cycles.

- Temperature Tolerance: Engineered to operate reliably across a broad temperature range, the MT29F2G08ABAGAWP-IT:G TR is well-suited for outdoor and automotive environments.

Application Example: Automotive Infotainment System

In an automotive infotainment system, the MT29F2G08ABAGAWP-IT:G TR serves as the primary storage for media content, maps, and system firmware, ensuring quick access and reliable storage.

Detailed Circuit Integration:

- Connection to System-on-Chip (SoC): The MT29F2G08ABAGAWP-IT:G TR interfaces with an automotive-grade SoC, which manages the infotainment system. Data lines (D0-D7) are directly connected to the SoC's GPIO pins, facilitating data storage and retrieval.

- Stable Power Supply: The MT29F2G08ABAGAWP-IT:G TR should be connected to a regulated 3.3V power source. It's critical to place decoupling capacitors near the power supply pins to ensure a stable voltage supply and minimize noise.

- Control Signal Wiring: Essential control signals such as CE (Chip Enable), WE (Write Enable), and RE (Read Enable) must be accurately wired to the corresponding control pins on the SoC, ensuring proper operation of the memory device.

- Addressing and Command Execution: Utilize the SoC to execute commands for reading from and writing to the MT29F2G08ABAGAWP-IT:G TR, with special attention to timing sequences as specified in the memory's datasheet.

Circuit Design Considerations

- Data Integrity Mechanisms: Implement mechanisms like Error Correction Code (ECC) within the SoC to detect and correct potential errors, ensuring the reliability of data stored in the MT29F2G08ABAGAWP-IT:G TR.

- Power Interruption Protection: Design the circuit with considerations for sudden power losses, incorporating capacitors that provide enough energy to complete ongoing write operations, thus preventing data corruption.

- Thermal Considerations: Given the potential for high temperatures, especially in automotive environments, incorporate thermal management solutions to maintain the MT29F2G08ABAGAWP-IT:G TR within operational temperature limits.

- Wear-Leveling Strategies: To maximize the lifespan of the MT29F2G08ABAGAWP-IT:G TR, employ wear-leveling techniques that distribute the wear across the memory cells evenly, reducing the likelihood of premature failure.

By adhering to these guidelines, the MT29F2G08ABAGAWP-IT:G TR can be effectively integrated into an automotive infotainment system, offering dependable and swift access to essential data and media content.

MT29F2G08ABAGAWP-IT:G TR FAQ

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6. What is the process for return or replacement of MT29F2G08ABAGAWP-IT:G TR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MT29F2G08ABAGAWP-IT:G TR we delivered, we will accept the replacement or return of the MT29F2G08ABAGAWP-IT:G TR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MT29F2G08ABAGAWP-IT:G TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations