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Name: IS61WV25616BLL-10TLI
Brand: ISSI, Integrated Silicon Solution Inc
SKU: IS61WV25616BLL-10TLI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ISSI, Integrated Silicon Solution Inc IS61WV25616BLL-10TLI

Part No.:: IS61WV25616BLL-10TLI

Manufacturer:: ISSI, Integrated Silicon Solution Inc

Package:: 44-TSOP (0.400, 10.16mm Width)

Datasheet:: IS61WV25616BLL-10TLI.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

In Stock:: 2226

Quantity:: Add To Cart

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IS61WV25616BLL-10TLI Specifications

Package/Case:
44-TSOP (0.400, 10.16mm Width)
Packaging:
Tray
Series:
-
ProductStatus:
Active
MemoryType:
Volatile
MemoryFormat:
SRAM
Technology:
SRAM - Asynchronous
MemorySize:
4Mb (256K x 16)
MemoryInterface:
Parallel
ClockFrequency:
-
WriteCycleTime-WordPage:
10ns
AccessTime:
10 ns
Voltage-Supply:
2.4V ~ 3.6V
OperatingTemperature:
-40°C ~ 85°C (TA)
MountingType:
Surface Mount

IS61WV25616BLL-10TLI this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IS61WV25616BLL-10TLI price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IS61WV25616BLL-10TLI to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IS61WV25616BLL-10TLI information

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IS61WV25616BLL-10TLI Typical application Circuitry

IS61WV25616BLL-10TLI

The IS61WV25616BLL-10TLI is a high-speed static RAM (SRAM) product from the esteemed ISSI (Integrated Silicon Solution Inc.) family of memory devices. Comprising a 4,194,304-bit static RAM organized as 262,144 words by 16 bits, the IS61WV25616BLL-10TLI offers fast access times with low power consumption, making it an attractive solution for a plethora of memory applications in today's electronics. Incorporating the IS61WV25616BLL-10TLI into circuit designs necessitates a deep understanding of its pin configuration and accurate interfacing techniques.

1. Data Input/Output (DQ0-DQ15): These pins act as bi-directional data terminals. In a read operation, data is available on these pins, while during a write operation, data is accepted from these pins. Connection strategies would depend on whether the RAM interfaces with a microcontroller, data bus, or another memory module.

2. Address Input (A0-A17): The address of the memory to be accessed is determined by these pins. They're connected to the address bus of the controlling unit, often a microcontroller or microprocessor.

3. Chip Enable (CE1, CE2): To activate the IS61WV25616BLL-10TLI for read or write operations, CE1 should be driven low and CE2 should be driven high. Conversely, to deactivate the chip, CE1 can be driven high or CE2 low, placing the SRAM in a standby mode, which reduces power consumption.

4. Write Enable (WE): This pin facilitates write operations. Data is written to the memory address indicated by the address inputs while the drive is low. Keeping this pin high ensures the device is either in read or standby mode.

5. Output Enable (OE): When driven low, this pin allows the data from the specified memory location to be presented on the DQ pins. If held high during a write operation, it prevents data from appearing at the outputs.

6. VCC and VSS: The power supply pin, or VCC, needs to be connected to the correct voltage level (often 3.3V) in accordance with the datasheet. VSS, on the other hand, is connected to the ground of the circuit.

7. LB and UB: The Lower Byte Control (LB) and Upper Byte Control (UB) pins provide byte-level control during data operations. When LB is driven low, the lower byte (DQ0-DQ7) is accessible, and when UB is driven low, the upper byte (DQ8-DQ15) becomes active. Utilizing these pins can optimize bandwidth for 8-bit operations.

8. Advanced Integration Considerations:

- Decoupling Capacitors: It's wise to place a decoupling capacitor (typically 0.1µF) close to the VCC pin of the IS61WV25616BLL-10TLI. This helps stabilize the supply voltage, minimizing noise and ensuring stable operation.

- Layout Strategy: As with many high-speed memory devices, trace lengths, impedance matching, and ground planes should be considered in PCB designs involving the IS61WV25616BLL-10TLI.

In sum, the IS61WV25616BLL-10TLI stands as a beacon of efficiency and performance in the SRAM memory segment. For engineers and designers, it offers a blend of speed and versatility, aptly fitting into diverse electronic applications. However, to truly harness its prowess, a combination of pin-specific understanding, sound design principles, and adherence to the IS61WV25616BLL-10TLI datasheet recommendations is essential.

IS61WV25616BLL-10TLI FAQ

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3. Are the IS61WV25616BLL-10TLI price and inventory displayed accurate?

The price and inventory of IS61WV25616BLL-10TLI fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of IS61WV25616BLL-10TLI?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IS61WV25616BLL-10TLI we delivered, we will accept the replacement or return of the IS61WV25616BLL-10TLI only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IS61WV25616BLL-10TLI.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations