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Name: DS125BR111RTWT
Brand: Texas Instruments
SKU: DS125BR111RTWT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments DS125BR111RTWT

Part No.:: DS125BR111RTWT

Manufacturer:: Texas Instruments

Package:: 24-WFQFN Exposed Pad

Datasheet:: DS125BR111RTWT.pdf

Description:: IC REDRIVER EQUALIZR 2CH 24WQFN

In Stock:: 3530

Quantity:: Add To Cart

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DS125BR111RTWT Specifications

Package/Case:
24-WFQFN Exposed Pad
Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
Type:
Buffer, ReDriver
Applications:
PCIe, SAS, SATA
Input:
CML
Output:
CML
DataRate(Max):
12.5Gbps
NumberofChannels:
2
DelayTime:
70ps
SignalConditioning:
Input Equalization, Output De-Emphasis
Capacitance-Input:
-
Voltage-Supply:
2.5V ~ 3.3V
Current-Supply:
40mA
OperatingTemperature:
-40°C ~ 85°C
MountingType:
Surface Mount

DS125BR111RTWT this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including DS125BR111RTWT price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for DS125BR111RTWT to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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DS125BR111RTWT information

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DS125BR111RTWT Typical application Circuitry

DS125BR111RTWT

The DS125BR111RTWT is a high-speed differential signal repeater and conditioner designed by Texas Instruments. It is tailored to enhance the integrity and extend the reach of high-speed serial links in data communication systems. With support for data rates up to 12.5 Gbps, this device is particularly suitable for applications requiring the transmission of high-speed differential signals over PCB traces or cables that may introduce signal degradation.

Key Features and Parameters:

- High-Speed Performance: Supports data rates up to 12.5 Gbps, ideal for applications like 10G Ethernet, Fibre Channel, and PCIe.

- Signal Conditioning: Offers both input equalization and output de-emphasis to combat signal degradation over long distances.

- Low Power Consumption: Designed for efficient operation, minimizing power usage in active mode.

- Flexible I/O Levels: Supports a range of differential input and output levels to interface with various high-speed standards.

- Compact Package: Available in a small footprint package, enabling its use in space-constrained applications.

Application Scenario: Using the DS125BR111RTWT in a high-performance computing cluster to ensure reliable interconnectivity between compute nodes over high-speed InfiniBand connections.

Circuit Design:

Designing a high-speed InfiniBand interconnect using the DS125BR111RTWT involves specific considerations for pin connections:

1. Power Supply Connection:

- VDD (typically Pin 2): Connect to a +3.3V power source. Implement decoupling capacitors near VDD to stabilize the power supply, ensuring consistent device performance.

2. Ground Connection:

- GND (Pins 1, 3, 5, etc.): Tie all ground pins to the system's ground plane. Effective grounding reduces noise and enhances signal integrity.

3. High-Speed Differential Data Inputs:

- RxIN+/- (Pins 6 and 7): Connect the differential input pair from the data source, such as a compute node, to these pins. Employing differential signaling reduces susceptibility to noise.

4. High-Speed Differential Data Outputs:

- TxOUT+/- (Pins 10 and 11): Route the differential output pair to the destination, another compute node or switch. Output de-emphasis compensates for transmission losses.

5. Device Configuration:

- SMBus Interface (SDA, SCL, typically Pins 12 and 13): Interface these pins with a microcontroller to configure device settings via SMBus. Accurate device configuration optimizes signal conditioning for the specific channel characteristics.

Design Considerations:

- Electromagnetic Interference (EMI): Implement shielding and routing strategies to minimize EMI, crucial for maintaining data integrity in high-speed applications.

- Thermal Management: Monitor and manage the thermal load of the DS125BR111RTWT, especially when deployed in dense, high-performance computing environments.

- Power Integrity: Ensure stable power delivery with minimal voltage fluctuations and noise, using appropriate decoupling techniques.

- Signal Routing: Design PCB traces with impedance control and minimal discontinuities to preserve signal integrity from source to destination.

- Firmware Integration: Develop firmware for dynamic control and monitoring of the DS125BR111RTWT, allowing for real-time adjustments based on system performance metrics.

Incorporating the DS125BR111RTWT into a high-performance computing cluster enhances InfiniBand connectivity, ensuring robust and reliable high-speed data transmission between nodes. This application highlights the DS125BR111RTWT's role in enabling efficient, high-bandwidth interconnects in data-intensive environments, demonstrating its value in supporting advanced computing applications.

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6. What is the process for return or replacement of DS125BR111RTWT?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the DS125BR111RTWT we delivered, we will accept the replacement or return of the DS125BR111RTWT only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of DS125BR111RTWT.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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