DS1245Y-70IND+

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Analog Devices Inc./Maxim Integrated DS1245Y-70IND+

HIGH-RELIABILITY-COMPONENTS
Part No.:
DS1245Y-70IND+
Manufacturer:
Analog Devices Inc./Maxim Integrated
Package:
32-DIP Module (0.600, 15.24mm)
Datasheet:
DS1245Y-70IND+.pdf
Description:
IC NVSRAM 1MBIT PARALLEL 32EDIP
In Stock:
242
Quantity:
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    DS1245Y-70IND+ this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including DS1245Y-70IND+ price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for DS1245Y-70IND+ to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    DS1245Y-70IND+ informationDS1245Y-70IND+ information

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    DS1245Y-70IND+ Typical application Circuitry

    DS1245Y-70IND+

    The DS1245Y-70IND+ is a high-capacity 1-Megabit Nonvolatile (NV) SRAM chip designed by Maxim Integrated. This chip integrates the speed and flexibility of SRAM with non-volatile data retention, thanks to an on-board battery. The "IND" designation indicates its suitability for industrial applications, with the "+" signifying an enhanced version, possibly with improvements in terms of reliability, data retention, or temperature tolerance. The "70" in its name suggests a 70 ns access time, making it fast enough for demanding applications that require quick data access alongside non-volatile storage capabilities.

    Key Features and Parameters:

    - 1-Megabit Capacity: Provides ample space for storing configuration data, logs, or any critical information that must be preserved during power loss.

    - Nonvolatile Storage: Ensures data is retained for over 10 years without power, thanks to its integrated lithium battery.

    - Fast Access Time: 70 ns access time allows for quick reads and writes, essential for high-performance industrial applications.

    - Industrial Temperature Range: Operates reliably in a wide temperature range, suitable for harsh industrial environments.

    - Unlimited Read/Write Cycles: Unlike flash memory, this NV SRAM supports an unlimited number of read/write operations, enhancing its lifespan and reliability.

    Application Scenario: Implementing the DS1245Y-70IND+ in a programmable logic controller (PLC) for an automated manufacturing line, ensuring program and operational data integrity across power cycles.

    Circuit Design:

    Incorporating the DS1245Y-70IND+ into a PLC system involves detailed planning around its pin connections:

    1. Power Supply Connection:

    - VCC (Pin 32): Connect to the +5V power supply of the PLC. Utilize decoupling capacitors near VCC to stabilize the power supply, essential for reliable chip operation.

    2. Ground Connection:

    - GND (Pin 16): Connect to the system ground. Proper grounding is vital to minimize electrical noise and ensure stable operation.

    3. Data Bus Interface:

    - DQ0 to DQ7 (Pins 8-15): Interface these pins with the PLC's data bus for seamless data communication. Signal integrity on the data bus is critical for accurate data transfers.

    4. Address Bus Connection:

    - A0 to A18 (Pins 1-7, 17-31, and 33-34): Connect to the PLC's address bus to select specific memory locations. Precise addressing ensures correct data storage and retrieval.

    5. Control Signals:

    - WE (Write Enable, Pin 29), CE (Chip Enable, Pin 22), OE (Output Enable, Pin 24): Manage these signals for reading and writing operations. Accurate control of these signals is crucial for maintaining data integrity.

    Design Considerations:

    - Power Failure Management: Design circuitry to swiftly switch to battery backup during power failures, safeguarding data integrity.

    - Battery Status: Plan for periodic checks of the battery's health and easy replacement, ensuring nonvolatile data retention capabilities are maintained.

    - EMI Protection: In industrial settings, shield the memory and associated circuits from electromagnetic interference that could corrupt data.

    - Access Timing Compatibility: Confirm that the system's timing matches the DS1245Y-70IND+'s access time to avoid data access delays.

    - Data Integrity Mechanisms: Implement checksums or CRC checks within the PLC's firmware to ensure the integrity of data read from the NV SRAM.

    By deploying the DS1245Y-70IND+ in a PLC for an automated manufacturing line, engineers can leverage its nonvolatile storage and fast access speed to enhance system reliability, ensuring critical program data is preserved across power interruptions. This application underscores the DS1245Y-70IND+'s role in industrial automation, highlighting its importance in improving operational efficiency and data security.

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    3. Are the DS1245Y-70IND+ price and inventory displayed accurate?

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    6. What is the process for return or replacement of DS1245Y-70IND+?

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    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of DS1245Y-70IND+.

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    (1)Inform us within 90 days

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