CY62167DV30LL-55ZXI this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including CY62167DV30LL-55ZXI price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for CY62167DV30LL-55ZXI to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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1. Principal Characteristics of the CY62167DV30LL-55ZXI Series: The CY62167DV30LL-55ZXI is engineered to deliver exceptional memory performance, featuring a 16-Mbit capacity with a 55 ns access time. This SRAM device is optimized for low-power operation while providing fast and reliable data storage and retrieval capabilities, catering to applications where energy efficiency and speed are paramount.
2. Pin Configuration and Strategic Connectivity Method: The CY62167DV30LL-55ZXI is typically presented in a 48-pin TSOP (Thin Small Outline Package) II package. Key pin groups include address pins (A0 to A19) for selecting memory locations, data pins (DQ0 to DQ15) for reading and writing data, and control pins such as CE# (Chip Enable), OE# (Output Enable), and WE# (Write Enable) for managing memory operations. Power supply pins (VDD) are used for powering the device, while ground pins (VSS) provide a common ground reference. Additional functionality may be accessed through pins like LB# (Lower Byte Enable) and UB# (Upper Byte Enable) for byte-level access control within the memory word.
3. Incorporating the CY62167DV30LL-55ZXI into Electronic Circuits: To effectively integrate the CY62167DV30LL-55ZXI into a circuit, the address pins should be connected to the system's address bus to facilitate memory location addressing. The data pins need to interface with the data bus for bidirectional data exchange. Control pins, including CE#, OE#, and WE#, must be accurately connected to the system's control lines to enable proper read and write operations. The LB# and UB# pins, if utilized, should be configured for byte-level access as required by the application. Ensuring clean and stable power connections to the VDD pins and a solid ground connection to the VSS pins is essential for the reliable operation of the SRAM.
4. Optimizing CY62167DV30LL-55ZXI Performance: Achieving the best performance from the CY62167DV30LL-55ZXI involves careful PCB design to minimize signal degradation, particularly for the address and data lines. Power supply design should focus on delivering clean and stable voltages to the device, with appropriate decoupling capacitors placed near the power pins to filter out noise.
5. System Design Considerations with the CY62167DV30LL-55ZXI: Designing a system with the CY62167DV30LL-55ZXI requires understanding the memory requirements, including access times and capacity. The SRAM should be seamlessly integrated with the system's processor or controller, ensuring compatibility and efficient communication between the components.
6. Applications Featuring the CY62167DV30LL-55ZXI: Given its low-power, high-speed characteristics, the CY62167DV30LL-55ZXI is well-suited for a range of applications, including but not limited to, embedded systems, automotive electronics, and portable devices, where efficient and reliable memory storage is critical.
In summary, the CY62167DV30LL-55ZXI from Cypress Semiconductor's MoBL® series represents a state-of-the-art SRAM solution, offering a balance between power efficiency and performance. Its integration into electronic systems demands meticulous planning around pin configuration, power management, and signal integrity, ensuring that the CY62167DV30LL-55ZXI meets the diverse needs of modern, memory-intensive applications.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
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