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Name: AS4C32M16SB-7TIN
Brand: Alliance Memory, Inc.
SKU: AS4C32M16SB-7TIN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Alliance Memory, Inc. AS4C32M16SB-7TIN

Part No.:: AS4C32M16SB-7TIN

Manufacturer:: Alliance Memory, Inc.

Package:: 54-TSOP (0.400, 10.16mm Width)

Datasheet:: AS4C32M16SB-7TIN.pdf

Description:: IC DRAM 512MBIT PAR 54TSOP II

In Stock:: 3816

Quantity:: Add To Cart

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AS4C32M16SB-7TIN Specifications

Package/Case:
54-TSOP (0.400, 10.16mm Width)
Packaging:
Tray
Series:
-
ProductStatus:
Active
MemoryType:
Volatile
MemoryFormat:
DRAM
Technology:
SDRAM
MemorySize:
512Mb (32M x 16)
MemoryInterface:
Parallel
ClockFrequency:
143 MHz
WriteCycleTime-WordPage:
14ns
AccessTime:
5.4 ns
Voltage-Supply:
3V ~ 3.6V
OperatingTemperature:
-40°C ~ 85°C (TA)
MountingType:
Surface Mount

AS4C32M16SB-7TIN this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including AS4C32M16SB-7TIN price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for AS4C32M16SB-7TIN to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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AS4C32M16SB-7TIN information

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AS4C32M16SB-7TIN Typical application Circuitry

AS4C32M16SB-7TIN

The AS4C32M16SB-7TIN is a high-speed CMOS Double Data Rate Synchronous DRAM (DDR SDRAM) memory chip. This memory module is designed for applications requiring large volumes of data to be processed efficiently, making it ideal for use in computing systems, high-performance servers, and various digital consumer electronics where speed and capacity are critical.

Application Scenarios and Parameter Features

The AS4C32M16SB-7TIN features a capacity of 512 Megabits, organized as 32M x 16 bits, and operates at a supply voltage of 3.3V. It supports bidirectional data strobe (DQS) and differential clock inputs (CK and CK#) to enhance data transfer rates while minimizing signal skew and improving noise immunity. This memory chip is designed for applications requiring high memory bandwidth and density, such as advanced graphics systems, high-performance computing, and network devices.

A specific application scenario is its use in a high-performance computing system where large datasets are processed and where quick access to stored data significantly impacts overall system performance.

Specific Circuit Connection

Integrating the AS4C32M16SB-7TIN into a high-performance computing system requires careful consideration of the memory interface design. The circuit connections and factors are listed in detail below:

1. Capacitors for decoupling and power supply: The VDD and VDDQ pins should first be connected to a 3.3V power source. To stabilize the power supply and reduce noise, decoupling capacitors must be used in close proximity to these pins. A combination of 0.1μF and 10μF capacitors is typically recommended.

2. Clock Signals: Connect the differential clock inputs, CK and CK#, to the memory controller's corresponding clock outputs. These signals are critical for timing and should be routed with precise impedance control and minimal skew to ensure stable operation.

3. Data Signals: The DQ (data) pins are the primary pathways for reading and writing data to the memory. Connect these pins directly to the corresponding data pins on the memory controller, ensuring that the traces are matched in length to minimize timing discrepancies.

4. Control and Address Signals: Connect the address (A0-A12), bank address (BA0-BA2), row and column strobes (RAS#, CAS#), write enable (WE#), and chip select (CS#) signals from the memory controller to the AS4C32M16SB-7TIN. These signals are used to specify the location and operation (read/write) to be performed, and their timing relative to the clock signals is crucial for correct operation.

Design Considerations

When designing the circuit, several key issues must be addressed:

- Signal Integrity: Careful layout and routing are required to maintain signal integrity, especially for high-speed signals like the clock and data lines. This includes impedance matching, minimizing crosstalk, and ensuring trace lengths are matched.

- Power Integrity: Adequate decoupling and a stable power supply are necessary to handle the dynamic power consumption caused by high-speed memory operations. Appropriate decoupling and power plane design can accomplish this.

- Thermal Management: When operating, the AS4C32M16SB-7TIN can produce a lot of heat, particularly in high-speed or high-density systems.

Adequate cooling or thermal management strategies should be considered to maintain reliability.

- Timing Constraints: Adherence to the timing constraints specified in the AS4C32M16SB-7TIN datasheet is critical for reliable memory operation. This includes setup and hold times for control and address signals relative to the clock edges.

By carefully considering these design aspects and ensuring precise and clean connections to the AS4C32M16SB-7TIN, developers can integrate this high-speed DDR SDRAM into high-performance computing systems effectively, leveraging its capacity and speed to enhance system performance.

AS4C32M16SB-7TIN FAQ

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6. What is the process for return or replacement of AS4C32M16SB-7TIN?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the AS4C32M16SB-7TIN we delivered, we will accept the replacement or return of the AS4C32M16SB-7TIN only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of AS4C32M16SB-7TIN.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations