Datasheet Photo Mfr. Part # Stock Price Quantity Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
GT20N135SRA,S1E GT20N135SRA,S1E

GT20N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=40A

Toshiba Semiconductor and Storage

3900 3.37
- +

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Tube - Active - 1350 V 40 A 80 A 2.4V @ 15V, 40A 312 W -, 700µJ (off) Standard 185 nC - 300V, 40A, 39Ohm, 15V - 175°C (TJ) Through Hole
GT30N135SRA,S1E GT30N135SRA,S1E

GT30N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=30A

Toshiba Semiconductor and Storage

2806 3.88
- +

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Tube - Active - 1350 V 60 A 120 A 2.6V @ 15V, 60A 348 W -, 1.3mJ (off) Standard 270 nC - 300V, 60A, 39Ohm, 15V - 175°C (TJ) Through Hole
GT15J341,S4X

Datasheet

GT15J341,S4X

GT15J341,S4X

PB-F DISCRETE IGBT TRANSISTOR TO

Toshiba Semiconductor and Storage

2270 1.58
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Tube - Active - 600 V 15 A 60 A 2V @ 15V, 15A 30 W 300µJ (on), 300µJ (off) Standard - 60ns/170ns 300V, 15A, 33Ohm, 15V 80 ns 150°C (TJ) Through Hole
GT20J341,S4X(S

Datasheet

GT20J341,S4X(S

GT20J341,S4X(S

DISCRETE IGBT TRANSISTOR TO-220S

Toshiba Semiconductor and Storage

3700 1.79
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Tube - Active - 600 V 20 A 80 A 2V @ 15V, 20A 45 W 500µJ (on), 400µJ (off) Standard - 60ns/240ns 300V, 20A, 33Ohm, 15V 90 ns 150°C (TJ) Through Hole
GT30J341,Q GT30J341,Q

GT30J341,Q

IGBT TRANS 600V 30A TO3PN

Toshiba Semiconductor and Storage

2152 2.58
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Tray - Active - 600 V 59 A 120 A 2V @ 15V, 30A 230 W 800µJ (on), 600µJ (off) Standard - 80ns/280ns 300V, 30A, 24Ohm, 15V 50 ns 175°C (TJ) Through Hole
GT30J121(Q)

Datasheet

GT30J121(Q)

GT30J121(Q)

IGBT 600V 30A 170W TO3PN

Toshiba Semiconductor and Storage

3816 2.91
- +

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Tube - Active - 600 V 30 A 60 A 2.45V @ 15V, 30A 170 W 1mJ (on), 800µJ (off) Standard - 90ns/300ns 300V, 30A, 24Ohm, 15V - - Through Hole
GT50J341,Q

Datasheet

GT50J341,Q

GT50J341,Q

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

2192 3.14
- +

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Tube - Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 200 W - Standard - - - - 175°C (TJ) Through Hole
GT40QR21(STA1,E,D

Datasheet

GT40QR21(STA1,E,D

GT40QR21(STA1,E,D

DISCRETE IGBT TRANSISTOR TO-3PN(

Toshiba Semiconductor and Storage

3583 3.16
- +

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Tube - Active - 1200 V 40 A 80 A 2.7V @ 15V, 40A 230 W -, 290µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) Through Hole
GT40RR21(STA1,E

Datasheet

GT40RR21(STA1,E

GT40RR21(STA1,E

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

3951 3.19
- +

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Tube - Active - 1200 V 40 A 200 A 2.8V @ 15V, 40A 230 W -, 540µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) Through Hole
GT50N322A

Datasheet

GT50N322A

GT50N322A

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

3676 4.17
- +

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Tube - Active - 1000 V 50 A 120 A 2.8V @ 15V, 60A 156 W - Standard - - - 800 ns 150°C (TJ) Through Hole
Total 18 Records«Prev12Next»
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