Datasheet Photo Mfr. Part # Stock Price Quantity Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUA250N04S6N007AUMA1

Datasheet

IAUA250N04S6N007AUMA1

IAUA250N04S6N007AUMA1

MOSFET_(20V 40V) PG-HSOF-5

Infineon Technologies

2769 3.73
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 435A (Tj) 7V, 10V 0.7mOhm @ 100A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 9898 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
P3M06120K3

Datasheet

P3M06120K3

P3M06120K3

SICFET N-CH 650V 27A TO-247-3

PN Junction Semiconductor

3935 9.05
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 27A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA - +20V, -8V - - 131W -55°C ~ 175°C (TJ) Through Hole
P3M06120K4

Datasheet

P3M06120K4

P3M06120K4

SICFET N-CH 650V 27A TO-247-4

PN Junction Semiconductor

2662 9.05
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 27A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA - +20V, -8V - - 131W -55°C ~ 175°C (TJ) Through Hole
IPZ65R095C7

Datasheet

IPZ65R095C7

IPZ65R095C7

IPZ65R095 - 650V AND 700V COOLMO

Infineon Technologies

410 4.25
- +

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Bulk * Active - - - - - - - - - - - - - -
2N6847

Datasheet

2N6847

2N6847

POWER FIELD-EFFECT TRANSISTOR, P

International Rectifier

186 4.34
- +

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Bulk * Active - - - - - - - - - - - - - -
AUIRFP2907

Datasheet

AUIRFP2907

AUIRFP2907

AUIRFP2907 - 75V-100V N-CHANNEL

Infineon Technologies

450 4.35
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP039N08B-F102

Datasheet

FDP039N08B-F102

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor

399 4.39
- +

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB11N60C3ATMA1

Datasheet

SPB11N60C3ATMA1

SPB11N60C3ATMA1

MOSFET N-CH 650V 11A TO263-3

Infineon Technologies

2029 4.59
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P3M06060T3

Datasheet

P3M06060T3

P3M06060T3

SICFET N-CH 650V 46A TO220-3

PN Junction Semiconductor

2150 10.38
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 46A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 170W -55°C ~ 175°C (TJ) Through Hole
P3M06060K3

Datasheet

P3M06060K3

P3M06060K3

SICFET N-CH 650V 48A TO247-3

PN Junction Semiconductor

2150 10.38
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 48A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Through Hole
P3M06060K4

Datasheet

P3M06060K4

P3M06060K4

SICFET N-CH 650V 48A TO247-4

PN Junction Semiconductor

3790 10.38
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 48A 15V 79mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Through Hole
NP110N055PUJ-E1B-AY NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY - SWITCHINGN

Renesas

1000 5.51
- +

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 2.4mOhm @ 55A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 14250 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C Surface Mount
P3M06040K3

Datasheet

P3M06040K3

P3M06040K3

SICFET N-CH 650V 68A TO247-3

PN Junction Semiconductor

138 12.17
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) Through Hole
P3M171K0G7

Datasheet

P3M171K0G7

P3M171K0G7

SICFET N-CH 1700V 7A TO-263-7

PN Junction Semiconductor

100 6.10
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 100W -55°C ~ 175°C (TJ) Surface Mount
FCH041N65EFL4

Datasheet

FCH041N65EFL4

FCH041N65EFL4

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

232 7.45
- +

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Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 7.6mA 298 nC @ 10 V ±20V 12560 pF @ 100 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
UJ4C075060B7S

Datasheet

UJ4C075060B7S

UJ4C075060B7S

750V/60MOHM, N-OFF SIC CASCODE

UnitedSiC

3715 50.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel SiCFET (Silicon Carbide) 750 V 25.8A (Tc) 12V 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1420 pF @ 400 V - 128W (Tc) -55°C ~ 175°C (TJ)
FCH041N65F-F085

Datasheet

FCH041N65F-F085

FCH041N65F-F085

MOSFET N-CH 650V 76A TO247-3

Fairchild Semiconductor

207 9.24
- +

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Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 250µA 304 nC @ 10 V ±20V 13566 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
UJ4C075033B7S

Datasheet

UJ4C075033B7S

UJ4C075033B7S

750V/33MOHM, N-OFF SIC CASCODE

UnitedSiC

2063 50.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel SiCFET (Silicon Carbide) 750 V 44A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ)
P3M12040K3

Datasheet

P3M12040K3

P3M12040K3

SICFET N-CH 1200V 63A TO-247-3

PN Junction Semiconductor

2962 20.98
- +

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Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A 15V 48mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +21V, -8V - - 349W -55°C ~ 175°C (TJ) Through Hole
IRF350

Datasheet

IRF350

IRF350

MOSFET N-CH 400V 14A TO3

NTE Electronics, Inc

2705 23.19
- +

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Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
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