Datasheet Photo Mfr. Part # Stock Price Quantity Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G2R1000MT17D

Datasheet

G2R1000MT17D

G2R1000MT17D

SIC MOSFET N-CH 4A TO247-3

GeneSiC Semiconductor

9514 5.77
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Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA - +20V, -5V 139 pF @ 1000 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R350MT12J

Datasheet

G3R350MT12J

G3R350MT12J

SIC MOSFET N-CH 11A TO263-7

GeneSiC Semiconductor

6800 5.84
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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G2R1000MT17J

Datasheet

G2R1000MT17J

G2R1000MT17J

SIC MOSFET N-CH 3A TO263-7

GeneSiC Semiconductor

17210 6.82
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Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 3A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA - +20V, -10V 139 pF @ 1000 V - 54W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R450MT17J

Datasheet

G3R450MT17J

G3R450MT17J

SIC MOSFET N-CH 9A TO263-7

GeneSiC Semiconductor

7574 8.52
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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R75MT12K

Datasheet

G3R75MT12K

G3R75MT12K

SIC MOSFET N-CH 41A TO247-4

GeneSiC Semiconductor

951 11.42
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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 207W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R75MT12J

Datasheet

G3R75MT12J

G3R75MT12J

SIC MOSFET N-CH 42A TO263-7

GeneSiC Semiconductor

2540 11.69
- +

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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 42A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 224W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R160MT17D

Datasheet

G3R160MT17D

G3R160MT17D

SIC MOSFET N-CH 21A TO247-3

GeneSiC Semiconductor

539 12.97
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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 21A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R160MT17J

Datasheet

G3R160MT17J

G3R160MT17J

SIC MOSFET N-CH 22A TO263-7

GeneSiC Semiconductor

1690 13.75
- +

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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 22A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R40MT12D

Datasheet

G3R40MT12D

G3R40MT12D

SIC MOSFET N-CH 71A TO247-3

GeneSiC Semiconductor

248 18.46
- +

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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R40MT12K

Datasheet

G3R40MT12K

G3R40MT12K

SIC MOSFET N-CH 71A TO247-4

GeneSiC Semiconductor

611 18.73
- +

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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
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