Cart ( )| Datasheet | Photo | Mfr. Part # | Stock | Price | Quantity | Packaging | Series | ProductStatus | Frequency | Bandwidth | FilterType | Ripple | InsertionLoss | MountingType | Size/Dimension |
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Datasheet |
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PTRA097058NB-V1High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz |
3000 | 0.00 |
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730 | 960 | 800 | 18.0 | 48 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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PTVA082407NFHigh Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
3000 | 0.00 |
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500 | 1000 | 250 | 22.5 | 36 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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PTVA084007NFHigh Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz |
3000 | 0.00 |
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500 | 1000 | 370 | 23.5 | 39 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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PTVA092407NF-V2High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
3000 | 0.00 |
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500 | 1000 | 287 | 22.5 | 40 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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PXAD184218FV-V1High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
3000 | 0.00 |
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1805 | 1880 | 420 | 16.0 | 52 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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PXAD214218FV-V1High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz |
3000 | 0.00 |
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1800 | 2300 | 436 | 16.0 | 49 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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PXAE183708NBHigh Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz |
3000 | 0.00 |
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1800 | 2200 | 315 | 16.0 | 51 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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PXAE213708NBHigh Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz |
3000 | 0.00 |
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2110 | 2200 | 290 | 16.0 | 52 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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PXAE261908NF-V1High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz |
3000 | 0.00 |
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2515 | 2675 | 240 | 13.5 | 47 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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PXAE263708NB-V1High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz |
3000 | 0.00 |
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2620 | 2690 | 400 | 13.5 | 47 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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PXFC191507FC-V1High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz |
3000 | 0.00 |
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1805 | 1990 | 140 | 20.5 | 31 | 28 | Packaged Discrete Transistor | |||
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Datasheet |
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WS1A2639-V1-R3K38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |
3000 | 0.00 |
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2496 | 2690 | 50 | 16.5 | 57 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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WS1A3640-V1-R3K39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz |
3000 | 0.00 |
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3300 | 3800 | 60 | 13.5 | 52 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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WS1A3940-V1-R3K39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz |
3000 | 0.00 |
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3700 | 3980 | 60 | 13.0 | 52 | 48 | Packaged Discrete Transistor | |||
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Datasheet |
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WSGPA01-V1-R3K10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier |
3000 | 0.00 |
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0 | 5000 | 10 | 18.0 | 19 | 48 | Packaged Discrete Transistor | |||
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880060GPS L2 RF BAW Filter |
3000 | 0.00 |
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BAW | Defense | 1,227.6 | 25 | 1.8 | SE/SE | 3.26 x 1.6 | |||
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880273GPS L1 RF BAW Filter |
3000 | 0.00 |
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BAW | Defense | 1,575.42 | 40 | 2.35 | SE/SE | 3.26 x 1.6 | |||
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880365GPS L3/L4 RF BAW Filter |
3000 | 0.00 |
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BAW | Defense | 1,380 | 38 | 2.75 | SE/SE | 3.26 x 1.6 | |||
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QPQ1060L1 Low Loss GPS SAW Filter |
3000 | 0.00 |
Add To CartInquiry Now |
TC-SAW | Defense, Infrastructure | 1,559.92 to 1,590.92 | 31 | 1.3dB typ | Single Input, Single Output | 1.4 x 1.2 x 0.84 | |||
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QPQ1061L2 Low Loss GPS SAW Filter |
3000 | 0.00 |
Add To CartInquiry Now |
TC-SAW | Defense, Infrastructure | 1,212.1 to 1,243.1 | 31 | 1.2dB typ | Single Input, Single Output | 1.4 x 1.2 x 0.84 |
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