Cart ( )| Datasheet | Photo | Mfr. Part # | Stock | Price | Quantity | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
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Datasheet |
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DPAD50 TO-72 4LLOW LEAKAGE, MONOLITHIC DUAL, PI |
2735 | 8.09 |
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Bulk | DPAD | Active | 2 Independent | Standard | 45 V | 50mA | 1.5 V @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | -55°C ~ 150°C | Through Hole |
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Datasheet |
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G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI |
2610 | 10.14 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI |
3394 | 10.21 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI |
3140 | 12.58 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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AS3D040120P21200V,40A SILICON CARBIDE SCHOTT |
3518 | 12.27 |
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Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 52A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P |
2171 | 14.47 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2302 | 14.47 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P |
2995 | 14.83 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2069 | 15.37 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P |
3360 | 16.67 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI |
2591 | 16.81 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2878 | 22.59 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2614 | 22.96 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G5S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2438 | 24.72 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G4S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2347 | 31.70 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G3S06540BSIC SCHOTTKY DIODE 650V 40A 3-PI |
2423 | 31.80 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 60A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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G5S12030BMSIC SCHOTTKY DIODE 1200V 30A 3-P |
3075 | 32.44 |
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Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 55A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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Datasheet |
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DBA200UA40DIODE MODULE 400V 200A |
2104 | 30.48 |
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Tube | - | Active | 2 Independent | Standard | 400 V | 100A | 1.2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 100 mA @ 400 V | -40°C ~ 150°C | Chassis Mount |
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Datasheet |
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DBA200YA40DIODE MODULE 400V 200A |
3297 | 30.67 |
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Tray | - | Active | 2 Independent | Standard | 400 V | 100A | 1.35 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 6 mA @ 400 V | -40°C ~ 150°C | Chassis Mount |
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Datasheet |
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DBA200WA40DIODE MODULE 400V 200A |
2172 | 31.18 |
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Tube | - | Active | 2 Independent | Standard | 400 V | 100A | 1.2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 4 mA @ 400 V | -40°C ~ 150°C | Chassis Mount |
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